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  • 1
    Electronic Resource
    Electronic Resource
    Zone-melting recrystallization with enhanced radiative heating for preparation of subboundary-free silicon-on-insulator thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1238-1240 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new zone-melting-recrystallization (ZMR) configuration with enhanced radiative heating has been developed for preparing silicon-on-insulator (SOI) films. With this configuration, in which the sample is positioned above the movable heater with the SOI film facing downward, subboundary-free 0.5-μm-thick SOI films are obtained over a much wider range of experimental parameters than with the conventional ZMR configuration. The characterization of these films by defect etching, optical microscopy, and transmission electron microscopy shows that the principal defects are isolated threading dislocations with a density of ∼106 cm−2. It should be possible to improve the material quality still further by optimizing experimental conditions for the new configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102465
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Cellular and dendritic morphologies on stationary and moving liquid-solid interfaces in zone-melting recrystallization (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 685-687 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is well known that when Si films are radiatively heated there exists a range of incident intensities for which liquid and solid regions coexist at near uniform temperature. Based on in situ microscopic observation of solidification interface morphologies, we argue that this phenomenon is responsible, at least in part, for the morphology of the liquid-solid interface in zone-melting recrystallization. We demonstrate this effect through stationary interface experiments. It is observed that even a stationary interface exposed to a gradient in radiation intensity develops interface morphologies similar to those of moving interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98334
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Ion irradiation enhanced crystal nucleation in amorphous Si thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1766-1768 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe+ irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500–580 °C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting that homogeneous nucleation occurred. Compared to thermal crystallization, a significant enhancement in the nucleation rate during high-energy ion irradiation (five to seven orders of magnitude) was observed with an apparent activation energy of 3.9±0.75 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104061
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 631-633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using picosecond time-resolved photoluminescence we have measured the lifetime of excess charge carriers in GaN epitaxial layers grown on sapphire at temperatures up to 300 K. The decay time turns out to be dominated by trapping processes at low excitation levels. The radiative lifetime derived from our data is dominated by free excitons at temperatures below 150 K, but also clearly shows the gradual thermal dissociation of excitons at higher temperatures. From our data, we are able to determine the free exciton binding energy and the free carrier radiative recombination coefficient. By combining these data with optical absorption data, we find the interband momentum matrix element and an estimate for the hole effective mass, which is much larger than previously thought. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118293
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  • 5
    Electronic Resource
    Electronic Resource
    Frozen Dessert Attribute Changes with Increased Amounts of Unsaturated Fatty Acids (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 59 (1994), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Vanilla flavor frozen desserts were made to be similar in composition except for the fat. Canola and soybean oils were combined with milk fat to provide fatty acid ratios of 1:1:1 and 3:2:1 (saturated: monounsaturated:polyunsaturated), whereas the milk fat control had a ratio of 24:8.6: 1. Sensory, physical and chemical tests indicated minimal differences between the control ice cream and the dessert with the 3:2:1 ratio. However, product with the 1:1:1 ratio was described as oily and oxidized in flavor. It melted faster, was softer in the penetration test and coarser in texture than the ice cream control.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1994.tb14682.x
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