Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 2236-2238
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Luminescence studies of thick (≥5 μm) GaAs epitaxial layers grown on Si substrates reveal regions of nonuniform stress associated with the presence of microcracks. Using cathodoluminescence spectroscopy as a tool for microcharacterization, the magnitude of the stress, derived from the peak positions of the luminescence spectra, is shown to increase gradually as a function of distance from the intersection of two microcracks. The greatest degree of stress relief was found at this intersection.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98951
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