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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 613-615 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An extension of the Judd–Ofelt technique [B. R. Judd, Phys. Rev. 127, 750 (1962)] is introduced in which measured fluorescence branching ratios are incorporated into the calculation of the Judd–Ofelt parameters. It is found that including branching ratio measurements into the analysis allows the Judd–Ofelt parameters to be reliably calculated with fewer ground-state absorption measurements than would otherwise be necessary. The method is applied to Pr3+:ZBLAN glass, an important material for 1.3 μm optical amplifiers. A closed-form expression is also derived for determining the Judd–Ofelt parameters from ground-state absorption data.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 213-215 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light-hole photoluminescence (PL) region, one identified with a free-exciton process and the other with donor-related transitions. Inhomogeneous line broadening was observed for the excitonic PL lines and related to stress fluctuations. Features which track the laser excitation line were observed and identified with a process in which a donor is excited from the n=1 ground state to an n=2 state.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4472-4478 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nonsaturable component to the 980 nm excited state absorption (ESA) is found in Er3+-doped silica glass fibers. This anomalous behavior of the ESA provides a way of quantitatively characterizing the degree of clustering in these glasses. It is found that the degree of clustering is greater for higher Er3+ concentrations, and is significantly reduced with the addition of aluminum to the glass. With this method it is also found to be possible to distinguish between true clustering and the occurrence of closely spaced Er3+ pairs in a random distribution.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6799-6811 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Stark levels of the 4I15/2 ground state manifold have been determined for Er3+-doped fluorozirconate, fluorophosphate, phosphate, and silicate bulk glasses from fluorescence-line-narrowing (FLN) measurements at 4.2 K. Splittings between adjacent Stark levels were observed to be 10–140 cm−1 and the total energy spread of the manifold was found to range from 335 to 400 cm−1. The position of a given Stark level varies up to 60 cm−1 depending on the particular Er3+ sites excited. Using the 4.2-K results, homogeneous broadening is found to be a reasonable approximation for the 300-K luminescence band of the glasses examined. Results are also presented for silica preforms as well as for a barium-zinc-lutetium-thorium fluoride composition. The FLN studies together with a Judd–Ofelt [Phys. Rev. 127, 750 (1962); J. Chem. Phys. 37, 511 (1962)] analysis of the absorption data suggest similarities in the local environment between the fluorozirconates and the high-fluorine fluorophosphates.
    Type of Medium: Electronic Resource
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