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Resonant photoluminescence excitation in GaAs grown directly on Si (1988)

Zemon, S. ; Jagannath, C. ; Shastry, S. K. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 213-215

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light-hole photoluminescence (PL) region, one identified with a free-exciton process and the other with donor-related transitions. Inhomogeneous line broadening was observed for the excitonic PL lines and related to stress fluctuations. Features which track the laser excitation line were observed and identified with a process in which a donor is excited from the n=1 ground state to an n=2 state.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100134

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