Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 1510-1512
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We show that two-photon photocurrent imaging can be used to nondestructively study vertical cavity surface emitting lasers on a microscopic level. In particular, we study the aperture isolation created by shallow ion implantation. The combination of two-photon backside imaging and a probe station is ideal for internal and full wafer characterization. The required peak and average power levels for testing can be easily satisfied by available compact ultrafast laser sources, making the technique practical and user friendly. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126079
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