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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3354-3356 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By impinging a beam of O+2 ions of energy 150 eV〈E〈1 keV on a Si(100) surface, we produced oxide films of varying thickness at room temperature. We find that the Si—O bond features of the films are quite similar to those of a thermally prepared vitreous SiO2 glass. We further observe that an intermediate range order in the form of n-member ring clusters with n=4 and n=6 exists in the resulting films.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, Co/Pd multilayered films with a few atomic layers of Co were prepared by alternating deposition in an ultrahigh-vacuum physical-vapor-deposition system. The structural parameters were estimated accurately making use of only the angular positions of x-ray diffraction peaks. The magnetic properties were found to vary greatly depending on Pd predeposition and Pd-sublayer thicknesses as well as Co-sublayer thickness. The Pd-predeposited films were found to have a remarkably high coercivity of 4723 Oe and a greatly enhanced interfacial magnetic anisotropy of 0.72 mJ/m2, which indicates an excellent potential as a magneto-optical recording medium.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9343-9348 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using x-ray photoelectron spectroscopy (XPS), W 4f core level spectra of electrochromic HxWO3 films have been investigated as a function of the injected charge. W 4f peaks become broader with increasing injected charge. The line shape analysis of W 4f XPS spectra of amorphous HxWO3 films reveals that each spin-orbit split component consists of two peaks. It is also found that, as the injected charge increases, the intensity of the low binding energy (BE) peaks, the asymmetry factor of core lines, and the intrinsic lifetime width increase systematically. Composite structures of W 4f peaks have been attributed to the existence of the different final states, screened by different numbers of W 5d electrons. The low BE peaks are considered to correspond to the locally screened final states, with one more W 5d electrons than in the ground state, which arise from midgap state conduction electrons near EF. There is also a possibility that a mixture of fine scale phases contributes to composite structures and broader linewidths in HxWO3. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1215-1217 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium oxide films with an electrical resistivity of less than 1.5×10−4 Ω cm and good optical quality were prepared by the reactive ion plating of pure indium in an oxygen atmosphere of ∼10−4 Torr. The deposition rate was in the range of 500–900 A(ring)/min, which is much higher than that of the ordinary evaporation. Hall effect measurement showed that the observed low resistivity is primarily due to the high electron mobility (≥70 cm2/V s) with carrier density up to 7×1020/cm3. These properties were correlated with the atomic concentration data by Auger electron spectroscopy and x-ray photoelectron spectroscopy. It has been found that the films of low resistivity had the atomic ratio of O to In of 1.29–1.31.
    Type of Medium: Electronic Resource
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