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  • 1
    Electronic Resource
    Electronic Resource
    Schottky barrier heights of Pt and Ir silicides formed on Si/SiGe measured by internal photoemission (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5160-5164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lowered-barrier-height silicide Schottky diodes are desirable for obtaining longer cutoff-wave- length Si-based infrared detectors. Silicide Schottky diodes have been fabricated by the reaction of evaporated Pt and Ir films on p-Si1−xGex alloys with a thin Si capping layer. The onset of metal-SiGe reactions was controlled by the deposited metal thickness. Internal photoemission measurements were made and the barrier heights were obtained from these. Pt-SiGe and Ir-SiGe reacted diodes have barrier heights of ∼0.27 and ∼0.31 eV, respectively, higher than typical values of 0.22 and 0.12 eV for the corresponding silicide/p-Si diodes. Their emission constants are also lower and more voltage dependent than silicide/Si diodes. PtSi/Si/SiGe diodes, on the other hand, have lower barrier heights (∼0.15 eV) than the PtSi/Si barrier height. The barrier height shifts in such silicide/Si/SiGe diodes are interpreted by accounting for tunneling through the unconsumed Si layer. This is done analytically using a simple model based on the Cohen, Vilms, and Archer (unpublished) modification to the Fowler equation, and leads to an extracted barrier height, that is, the Si barrier height reduced by the Si/SiGe band offset.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355763
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  • 2
    Electronic Resource
    Electronic Resource
    Optical properties of epitaxial CoSi2 and NiSi2 films on silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2738-2741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the optical constants of epitaxial films of CoSi2 and NiSi2, grown by molecular beam epitaxy on Si(111), in the energy range of 0.9–4.0 eV. The behavior of the optical constants is characteristic of metals: Drudelike in the low energy region and deviating from Drude behavior as interband transitions set in. Interband transitions are found to have already set in at 1 eV. The absorption varies significantly with energy, which has implications for photoresponse studies of internal photoemission in these material systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344217
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  • 3
    Electronic Resource
    Electronic Resource
    Optical properties of epitaxial CoSi2/Si and CoSi2 particles in Si from 0.062 to 2.76 eV (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5601-5605 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the optical properties of epitaxial CoSi2 films on Si from 0.062 to 2.76 eV by ellipsometry and spectrophotometry. The energy dependencies of the dielectric constants show Drude behavior at energies lower than ∼0.2 eV with Drude parameters (h-dash-bar)ωp=(5.8±0.2) eV and (h-dash-bar)/τ=(0.09±0.02) eV. Using the measured optical constants, the CoSi2 film is shown to have maximum absorptance at a thickness of ∼20 nm for λ(approximately-greater-than)1.4 μm. Finally, we have calculated the absorptance of a composite film of CoSi2 particles embedded in Si and found that the absorptance peak due to a surface plasmon resonance in the CoSi2 particles shifts to higher energy as the ellipsoidal particles become more elongated, in agreement with recent observations by Fathauer et al. [Phys. Rev. B 44, 1345 (1991)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350539
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of YBa2Cu3O7−x thin films on Si with a CoSi2 buffer layer (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 419-421 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using the pulsed laser deposition technique, high-temperature superconducting YBa2Cu3O7−x (YBCO) films were grown on Si(001) with a 36 nm single-crystal 〈001〉 oriented CoSi2 buffer layer. The films, grown at a substrate temperature of ∼700 °C, have a metallic resistive temperature dependence with zero resistance at 85 K. X-ray diffraction, scanning electron microscopy, and ion channeling studies show that the YBCO films are polycrystalline but are strongly c-axis oriented normal to the Si substrate. Diffusion at the interface between the YBCO film and silicide buffer layer was minimized. This is essential to the growth of high-temperature superconducting films on Si substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104655
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  • 5
    Electronic Resource
    Electronic Resource
    Microstructural stability of epitaxial CoSi2/Si (001) interfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4853-4856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of cobalt silicide grown on (001) Si by molecular beam epitaxy have been characterized by transmission electron microscopy. Apart from (001) oriented CoSi2 grains, regions of 〈221〉 type orientations were also found. The 〈221〉 oriented domains were found to be associated with pronounced facetted depressions on the (001) Si surface. Empirical observations suggest that the formation of 〈221〉 CoSi2 domains and the formation of other types of silicide stoichiometries may be related. It is demonstrated that these microstructural instabilities may be suppressed by the codeposition of cobalt and silicon rather than simply by depositing cobalt and reacting with the Si substrate to produce (001) CoSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349026
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  • 6
    Electronic Resource
    Electronic Resource
    Control of misoriented grains and pinholes in CoSi2 grown on Si(001) (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2811-2813 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of growth conditions have been obtained that consistently overcome the formation of epitaxially misoriented grains in CoSi2/Si(001). One is by co-deposition of Co and Si at Co-rich ratios at a substrate temperature of ∼500 °C. This method yields films of low resistivity (16 μΩ cm) and low ion channeling minimum yield (χmin≈2%), but the misfit dislocation densities are of the order of 105 cm−1. The second way uses a template method of growth after an epitaxial Si buffer layer. Films grown this way have somewhat higher resistivities than those grown by the first method, but have lower misfit dislocation densities. The strain relief mechanism in these films also appears to be different from that of co-deposited films. Pinhole densities in films grown by both methods are below our detection limit of 103 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104201
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  • 7
    Electronic Resource
    Electronic Resource
    Tunable, long-wavelength PtSi/SiGe/Si Schottky diode infrared detectors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 506-508 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated p-type PtSi/SiGe/Si Schottky diodes with barrier heights (from photoresponse) that are lowered (relative to PtSi/Si) and highly dependent on the applied bias. The variability in the barrier height is obtained by using the SiGe/Si valence band offset as an additional barrier. When placed in close proximity to the PtSi/SiGe Schottky barrier, the total effective barrier can be altered dramatically by adjusting the applied reverse bias. The voltage sensitivity of the total barrier height can be controlled by the SiGe layer thickness. The voltage-variable barrier heights range, for example, from 0.30 eV at zero bias to 0.12 eV at 2.4 V reverse bias for a 20%, 450 A(ring) thick SiGe layer. This lowest barrier height corresponds to a cutoff wavelength of 10 μm, extending the detection range of PtSi infrared detectors to the long-wavelength range. The quantum efficiency coefficients C1 are normal at this long-wavelength end, but reduced over the rest of the tunable range, because hot carriers have to traverse the entire SiGe thickness in order to be detected. The hot carriers' energy losses from quasielastic scattering in the SiGe are taken into account in a theoretical model that gives good agreement with data. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114551
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