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  • 1
    Electronic Resource
    Electronic Resource
    Oxidation-induced traps near SiO2/SiGe interface (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1542-1547 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an Al/SiO2(wet)/Si0.9Ge0.1/n–Si/Al capacitor structure, effects of oxidation on bulk trap and interface states near the SiO2/SiGe interface are investigated. Two peaks at the energy levels of 0.23 eV (D1) and 0.40 eV (D2) below the conduction band edge are observed with the capacitance deep level transient spectroscopy (DLTS) method. The DLTS measurement results show a characteristic feature of interface states for the D1 peak. The interface state distribution obtained by the capacitance–voltage method also has a high density (6.9×1012/cm2 eV) peak at an energy level of 0.23 eV below the conduction band edge. The Si–O– dangling bonds are thought to be the source of the D1 peak. The annealing behaviors of the D2 peak show that D2 is a divacancy related bulk trap. The capture cross section and the trap density for the bulk trap D2 are 2.06×10−15/cm2 and 1.8×1014/cm3, respectively. The density of D2 is significantly reduced after low temperature postmetallization annealing. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370927
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  • 2
    Electronic Resource
    Electronic Resource
    Amelioration of a degraded Oxic Paleustalf by leguminous and natural fallows (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Soil use and management 13 (1997), S. 0 
    Details
    ISSN: 1475-2743
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract. The restorative ability of herbaceous (Psophocarpus palustris, Pueraria phaseoloides) and woody (Leucaena leucocephala, Senna siamea, Acacia leptocarpa, Acacia auriculiformis) legume species and of natural regrowth was studied on an eroded and compacted Oxic Paleustalf in southwestern Nigeria. Compared to the control treatment that was continuously cropped for 15 years, four years of fallowing significantly improved test crop yields. However, fallowing with the above species did not substantially improve soil properties, particularly soil bulk density. A longer fallow period may be needed to amend soil physical conditions of this degraded Alfisol. Soil chemical properties were greatly improved following land clearing and plant biomass burning in 1993. However, the residual effect of burning on soil fertility was insignificant in the second cropping year. Among the fallow species, P. palustris and natural fallow showed the best residual effect on test crop performance. Despite the high biomass and nutrient yields of S. siamea and A. auriculiformis, test crop yields on these plots were low due to the border effects from the uncleared and fallowed subplots.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1475-2743.1997.tb00572.x
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  • 3
    Electronic Resource
    Electronic Resource
    Zn diffusion enhancement of interdiffusion in a GaInAsP-InP heterostructure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1768-1770 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of concurrent Zn diffusion on the interdiffusion in a Gax In1−x Asy P1−y -InP heterostructure (x=0.28, y=0.61) was investigated using Auger electron spectroscopy and secondary-ion mass spectrometry. The measured profiles showed that the Zn diffusion (600 °C, 1–4 h) predominantly enhanced the cation (In-Ga) interdiffusion. The result could not be interpreted by the Zn-vacancy complex model. Under conditions of a group V overpressure, our results suggest that cation interstitials may control both the rate of Zn diffusion and the mixing of the group III sublattices in the InP-based alloy system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102213
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  • 4
    Electronic Resource
    Electronic Resource
    20-O-β-D-Glucopyranosyl-20 (S)-protopanaxadiol (compound K) induces expression of hyaluronan synthase 2 gene in transformed human keratinocytes and fibroblasts and increases hyaluronan in hairless mouse skin (2004)
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 26 (2004), S. 0 
    Details
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Ginsenosides, the major active ingredient of ginseng, show a variety of biomedical efficacies such as anti-aging, anti-oxidation and anti-inflammatory activities. To understand the effects of 20-O-β-D-glucopyranosyl-20 (S)-protopanaxadiol (compound K), one of the major metabolites of ginsenosides on the skin, we assessed the expression level of approximately 100 transcripts in compound K-treated HaCaT cells using cDNA microarray analysis. Compound K treatment induced differential expression of 40 genes, which have been reported to be involved in the organization of the structure of the extracellular matrix as well as defense responses in human skin cells. One of the most interesting findings is a two-fold increase in hyaluronan synthase2 (HAS2) gene expression by compound K. We found that change in expression of HAS2 gene represents a specific response of HaCaT cells to compound K because hyaluronan synthase 1,3 was not changed by treatment with compound K. We also demonstrated that the compound K effectively induced hyaluronan synthesis in human skin cells and hairless mouse skin. A human clinical study indicated that topical application of compound K containing oil-in-water emulsion showed improvement of xerosis, wrinkle and fine lines in the aged skin. We concluded that compound K has anti-aging effects by the induction of HAS2 gene expression and following hyaluronan synthase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1467-2494.2004.00244_2.x
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  • 5
    Electronic Resource
    Electronic Resource
    Fabrication of c-oriented HgBa2Ca2Cu3O8+δ superconducting thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2866-2868 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Hg-based cuprate thin films have been fabricated on (100) SrTiO3 substrate using rf sputtering and post-Hg-vapor annealing. These films are dominated by c-axis-oriented Hg-1223 phase as indicated by x-ray diffraction and SQUID measurements. Using four-probe technique, the Tc,onset was found to be 130–132 K and Jc was up to 8.5×104 A/cm2 at 77 K and zero field. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114811
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  • 6
    Electronic Resource
    Electronic Resource
    Different fatigue behaviors of SrBi2Ta2O9 and Bi3TiTaO9 films: Role of perovskite layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2644-2646 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate the role of the perovskite layers on fatigue behaviors, SrBi2Ta2O9(SBT) and Bi3TiTaO9 (BTT) films were prepared by pulsed laser deposition using 15% Bi-excess bulk targets. The SBT and the BTT films grown at the similar deposition conditions showed similar growth behaviors, electrical properties, and retention characteristics. However, these films showed very different fatigue behaviors. The difference should come from the oxygen stability in the perovskite layer. Our work demonstrates that oxygen stability of the perovskite layers, as well as the self-regulating adjustment of the Bi2O2 layers, should be considered in the search for new candidate materials for nonvolatile ferroelectric memory devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125105
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  • 7
    Electronic Resource
    Electronic Resource
    High critical current density in epitaxial HgBa2CaCu2OX thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2989-2991 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality superconducting HgBa2CaCu2Ox (Hg-1212) thin films have been reproducibly fabricated using cation-exchange method. The thin films have pure Hg-1212 phase and have smooth surface morphology. The superconducting transition temperatures of these films are in the range of 120–124 K. The critical current density Jc is up to 3.2×106 A/cm2 at 77 K and drops only by a factor of 2 at 100 K and self field. At 110 K, a Jc of 7.8×105 A/cm2 has been obtained. X-ray diffraction pole figures show that these films are epitaxially grown on LaAlO3(001) substrates, which is consistent with a χmin of 19% obtained using Rutherford backscattering/channeling analysis. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122653
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  • 8
    Electronic Resource
    Electronic Resource
    Minimization of detrimental effect of air in HgBa2CaCu2O6+δ thin film processing (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1766-1768 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of halogenizing HgBa2CaCu2O6+δ (Hg-1212) thin films and have found that the addition of chlorine/fluorine significantly enhances (1) the reproducibility and stability of Hg-1212 thin films, (2) the phase purity of Hg-1212 to over 90%, and (3) the magnetic critical current density (Jc,mag) both at zero field and in-field. A possible mechanism of preventing contamination of precursor materials by chlorine/fluorine doping is proposed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121178
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  • 9
    Electronic Resource
    Electronic Resource
    Mass-transfer coefficient and pressure-drop data of two-phase oxygen-water flow in bubble column packed with static mixers (1975)
    s.l. : American Chemical Society
    Journal of chemical & engineering data 20 (1975), S. 26-28 
    Details
    ISSN: 1520-5134
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/je60064a002
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  • 10
    Electronic Resource
    Electronic Resource
    Mechanism of low temperature hydrogen-annealing-induced degradation in Pb(Zr0.4Ti0.6)O3 capacitors (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 697-699 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in the polarization–field hysteresis loop were systematically investigated for Pb(Zr0.4Ti0.6)O3 capacitors after forming gas annealing at 200 °C. Voltage shift in hysteresis was strongly dependent on the polarization states and ascribed to an asymmetric distribution of defect charges and pinned defect dipoles. Field recovery of the imprinted capacitors and increase in coercive field after the recovery were discussed in conjunction with reversible defect dipoles. From the relaxation of the voltage shift with an activation energy of 0.21 eV, it is inferred that charge trapping may be the main cause of the voltage shift and the subsequent degradation of the capacitors by pinning the polarization and defect dipoles. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492006
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