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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 156-160 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article shows that the presence of low-temperature-grown GaAs (LT-GaAs) in LT-GaAs/AlAs/GaAs:Si heterostructures increases the Al/Ga interdiffusion at the heterostructure interfaces. The interdiffusion enhancement is attributed to the presence of Ga vacancies (VGa) in the As-rich LT-GaAs, which diffuses from a supersaturation of VGa frozen-in during sample growth. Chemical mapping, which distinguishes between the AlAs and GaAs lattices at an atomic scale, is used to measure the Al concentration gradient in adjacent GaAs:Si layers. A correlation is observed between the Al/Ga interdiffusion and the gate breakdown voltage in metal-insulator field-effect transistor structures containing LT-GaAs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, experimental results are presented for the homoepitaxial deposition of a GaN overlayer onto a bulk single-crystal GaN substrate using molecular beam epitaxy. Transmission electron microscopy shows a superior structural quality of the deposited GaN overlayer when compared to heteroepitaxially grown layers. Photoluminescence shows narrow excitonic emission (3.467 eV) and the very weak yellow luminescence, whereas the bulk substrate luminescence is dominated by this deep level emission. These results show that homoepitaxy of GaN can be used to establish benchmark values for the optoelectronic properties of GaN thin films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: High-resolution transmission electron microscopy (HRTEM) employing focus-variation phase-reconstruction methods is used to image the atomic structure of grain boundaries in a silicon nitride ceramic at subangstrom resolution. Complementary energy-dispersive X-ray emission spectroscopy experiments revealed the presence of yttrium ions segregated to the 0.5–0.7-nm thin amorphous boundary layers that separate individual grains. Our objective here is probing if yttrium ions attach to the prismatic planes of the Si3N4 at the interface toward the amorphous layer, using Scherzer and phase-reconstruction imaging, as well as image simulation. Crystal structure images of grain boundaries in thin sample (〈100 Å) areas do not reveal the attachment of yttrium at these positions, although lattice images from thicker areas do suggest the presence of yttrium at these sites. It is concluded that most of the yttrium atoms are located in the amorphous phase and only a few atoms may attach to the terminating prism plane. In this case, the line concentrations of such yttrium in the latter location are estimated to be at most one yttrium atom every 17 Å.
    Type of Medium: Electronic Resource
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