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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2946-2954 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ultrafast pump-probe signal of a two band semiconductor amplifier is theoretically analysed using Maxwell-Semiconductor-Bloch equations. It is shown that the coupling of the pump and probe pulse via the probe gain modification significantly contributes to the signal for short delay times between pump and probe. The probe signal exhibits dominant oscillatory interference-like structures which conceal intensity dependent ultrafast features. Despite the semiconductor is described with a two band model which does not include free carrier absorption and two photon absorption the results are qualitatively similar to those of recent experiments. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 7831-7838 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The optical near-field response of a three dimensional subwavelength aperture-semiconductor system is analyzed within a finite difference time domain scheme for Maxwell's and excitonic material equations. The analysis includes the field modification due to the high refractive index environment and the excitonic response to a near-field distribution. The resonant optical response is illustrated for anisotropic dipole transitions in quantum wells and the enhancement of the quadrupole transition in materials with dipole forbidden interband transitions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1326-1332 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact fluorescence detector has been developed which allows to count slow, single Na atoms. By using glass fibers for the exciting and the fluorescence light we obtained free movability of the detector. The detection efficiency has been analyzed and optimized by an extensive investigation of all processes concerning the laser-induced fluorescence, especially the random walk of the atom, saturation effects, and optical pumping. Single atoms are identified by registration of photon bursts which stand out from the Poisson distributed background. An absolute calibration of the detection efficiency has been achieved by a time-resolved fluorescence measurement in combination with a corresponding Monte–Carlo simulation. Atomic fluxes well below 1 atom/s can be determined with an uncertainty of less than ±10%. Assuming a continuous flux of 1 atom/s with 25 m/s typically about 50% of these atoms are counted. The detector is an excellent tool for differential scattering experiments with slow atomic beams. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 4176-4178 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have examined the vibrational noise originating from 1.3 K pumped helium chambers (1 K pots) that are continuously filled from the 4.2 K bath through an impedance. The noise can be largely eliminated by either heating the pot or by heating the impedance directly. Noise in 1 K pots has detrimental consequences for the operation of audio frequency torsional oscillators and for high precision thermometry. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of InAs on InP and InP on GaAs is investigated using reflectance anisotropy (RA) measurements. Very large optical anisotropies are observed, related to the three-dimensional growth mode of these materials. A model is proposed to account for the optical properties of the samples, using effective medium theories to describe the roughness. Good quantitative agreement is obtained for small roughness thickness, and a qualitative description is found for larger roughness features. The RA technique is found to be very useful to monitor the growth of lattice-mismatched materials, particularly at the nucleation stage.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2978-2980 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quasiequilibrium nonlinear optical absorption spectra are computed for semiconductor superlattices. The theory generalizes the semiconductor Bloch equations to describe anisotropic structures. The equation for the interband polarization is solved numerically and the carrier-density dependent optical nonlinearities are computed. Starting from excitonic absorption, with increasing density exciton saturation and the development of gain is observed. The dependence of the gain spectra on structural parameters of the superlattice is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Inorganic chemistry 25 (1986), S. 4067-4068 
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 754-756 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A many-body calculation of the nonlinear optical response of bulk group-III nitrides is presented. For the example of GaN it is shown that the Coulomb effects contribute significantly to the magnitude and spectral extension, as well as the temperature and carrier density dependences of the optical gain and absorption. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 6776-6781 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Computational path integral methods have been used to study the excitonic properties of an effective mass quantum dot model. The results are compared to those of variational calculations. The variational method, using a free particle basis, accurately gives the ground and low lying excited state properties for small radii dots where the kinetic energy dominates over the Coulomb interaction. The path integral approach, which is not restricted to small radii dots, gives a thermal average over states. One thermal effect noted for this model is an inversion of the surface charge layer with temperature due to the competition between thermal and Coulomb energies. At high temperature, where Coulomb effects are secondary, the thermal deBroglie wavelength sets the scale for the density variation near a surface and thus the heavier holes approach the surface more closely than the electrons. As the temperature is lowered the now more important Coulomb binding causes the holes to be cushioned away from the surface by the electron cloud. This inversion temperature decreases as the dot radius increases. Both calculations predict increasing biexciton binding energy with decreasing dot size.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlinear optical properties of laser-excited semiconductors are discussed, and the applications to optical bistability and optical logic are reviewed. The physical origin of the nonlinearities is analyzed in terms of the many-body interactions in the system of electron-hole pairs, causing effects such as plasma screening of the Coulomb interaction, band-gap renormalization, and band filling. Theoretical results for absorption and refractive-index spectra are compared to experimental data obtained for room-temperature GaAs and other semiconductors. The experimental and theoretical results for dispersive optical bistability in semiconductors are summarized, and recent experiments on optical logic gating and pattern recognition are discussed.
    Type of Medium: Electronic Resource
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