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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 2538-2551 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rotational and vibrational distributions of H2 and D2 recombinatively desorbing from clean Cu(110) and Cu(111) surfaces following atomic permeation are studied using multiphoton ionization combined with time-of-flight mass spectrometry. Rotational distributions are found to be non-Boltzmann and to possess mean rotational energies which are 80%–90% of the surface temperature, Ts. These distributions are identical to within the experimental accuracy for H2 and D2 and also for desorption from the (110) and (111) faces. Moreover, the ortho and para nuclear spin modifications of both isotopes are statistically populated. In contrast, the vibrational population ratio, Pv‘=1/Pv‘=0, is found to be as much as 100 times greater than the ratio corresponding to a Boltzmann vibrational population at Ts. Specifically, the Pv‘=1/Pv‘=0 ratio for H2 (D2) is 0.052±0.014 (0.24±0.20) desorbing from Cu(110), and 0.084±0.030 (0.35±0.20) desorbing from Cu(111). For comparison the Boltzmann-at-Ts ratios would be 0.0009 for H2 and 0.0063 for D2 at T=850 K. Simple models are discussed which attempt to account for the qualitative trends of these results. Detailed balance arguments applied to the vibrational distributions measured in recombinative desorption are unable to predict correctly the dissociative adsorption probability as a function of vibration, indicating that these two processes are dynamically different for this system.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 308-310 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The valence-band structures of 50-A(ring)-thick layers of GaAs(001) in tension and In0.2Ga0.8As(001) in compression have been determined using angle-resolved photoemission spectroscopy. Our studies show that the Δ3+Δ4 bands and the Δ1 band respond differently to the strain perturbation. For strained GaAs(001), the Δ3+Δ4 bands (Px+Py-like) are shifted up in energy by a maximum amount of 0.3 eV, while in contrast, the Δ1 band (Pz-like) is shifted down by about 0.1 eV. For strained In0.2Ga0.8As(001), the band shifts are in the opposite direction, consistent with the opposite strain conditions. For both materials, the strain-induced changes cannot be characterized simply by rigid band shifts, but rather exhibit significant wave vector dependence. This results in a reduction of the effective mass of the Δ3+Δ4 bands for both GaAs and In0.2Ga0.8As.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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