ISSN:
1432-0630
Keywords:
PACS: 68.35.Bs; 34.50.Dy; 82.65.My
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
× surface phase in the In/Si(111) system at a substrate temperature of about 300 °C using scanning tunneling microscopy. At the initial stage of atomic hydrogen exposure to the × surface, hydrogen atoms preferably attack only the half-unit of the × 〈 ![IGNORE[$\sqrt{31}$]] lattice to expel the In atoms, and the × surface periodicity is still preserved. Upon prolonged exposure of hydrogen, the surface drastically changes, destroying the × periodicity in which very short and double-spaced stripes are observed, indicative of the formation of quasi-one-dimensional Si chains terminated with hydrogen atoms. These phenomena can be explained in terms of hydrogen-induced Si mass transport and the subsequent rearrangement of Si atoms which have formed a reconstructed substrate layer (missing top layer structure) under a × -In overlayer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390051280
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