ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The influence of implantation of Si+ ions with energies of 30, 60, and 120 keV was studied on the dark conductivity, photoconductivity, hydrogen concentration, microstructure parameter, and special features of the ultrasoft X-ray emission spectra of a-Si:H films that were deposited at T s =300°C by the dc-MASD and rf-PECVD methods and that differed in initial structural characteristics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187951
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