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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 5917-5921 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5427-5432 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical transport properties of CoSi2 and Co(SixGe1−x)2 thin films formed by solid state interaction and co-evaporation in the range of 4–300 K were studied. The Hall effect data indicate a hole carrier conduction in all samples. The rapid thermal annealed CoSi2 exhibits a typical metallic conduction with a residual resistivity of 3.3-μΩ-cm and room-temperature (RT) resistivity of 15 μΩ cm. The co-evaporated CoSi2 and Co(Si0.9Ge0.1)2 films after low temperature annealing up to 250 °C show a low resistivity of 70–80 μΩ cm at RT and change little down to 4 K. The hole carrier density of all the samples studied has values close to 2–3×1022 cm−3, while the carrier Hall mobility has large differences.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2908-2913 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time-varying charge buildup in the quantum well region of a resonant tunneling diode (RTD) and related capacitive effects are calculated using the scattering matrix method developed. The small signal analysis of admittance shows a prominent influence from the capacitive effect, due to the dynamic shifting of the resonant energy levels. The model developed is helpful for understanding the RTD's high-frequency behavior and device applications.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2516-2519 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Mg1/3Nb2/3)O3 dielectrics modified by CaTiO3 were prepared by a solid-state reaction method, and microstructure analyses were performed together with the dielectric characterization. Solid solutions with cubic perovskite structures were obtained for compositions of 0–60 mol %CaTiO3, and the orthorhombic perovskite structures were observed for compositions near to the end member of CaTiO3 in the present system. The dielectric loss and temperature coefficient could be pronouncedly reduced by incorporating CaTiO3 into Pb(Mg1/3Nb2/3)O3. Low-loss dielectrics (tan δ∼10−4 at 1 MHz) with dielectric constants of 120–262 and small temperature coefficient (τε∼−960 to −1100 ppm/ °C) were obtained, and further improvement of dielectric properties could be expected through structural modifications. Good microwave dielectric properties, ε=172.6 and Qf=1930 GHz, were achieved in a composition of 0.4Pb(Mg1/3Nb2/3)O3/0.6CaTiO3, where the temperature coefficient of resonant frequency τf was estimated as 470 ppm/ °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4154-4159 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS:Mn thin films at various substrate temperature are grown by halide transport chemical vapor deposition. These films show blue and red photoluminescence (PL) in addition to the typical yellow-orange emission. The manganese crystal environment is characterized by electron spin resonance (ESR) spectroscopy. A computer simulation of the ESR spectra is used to quantify the number of isolated manganese and the number of clustered manganese in the crystal lattice. These data reveal that the red emission occurs in films with low manganese concentration, and, therefore, occurs from a mechanism different than those previously posed. The activation energy for Mn incorporation is measured to be Ea=137 kJ/mol. From these data, a Mn–Cl defect pair is proposed as the red emission center. Self-activated blue emission in intentionally Cl-doped ZnS films is also demonstrated. Thus both red and blue PL in ZnS thin films result from chloride impurities. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2157-2159 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Zr0.5Ti0.5)O3 thin films 25 nm in thickness were grown on LaNiO3/Pt/Ti buffered Si substrates at 600 °C by metalorganic chemical vapor deposition. P–E studies showed a remanent polarization value of 8 μC/cm2 with a coercive field of 200 kV/cm. In polarization fatigue studies, these films only showed slight degradation in remanent polarization up to 4×108 cycles (±3 V oscillation) before breakdown. Moreover, the effect of space charge on the C–V behavior of these films was illustrated I–V characteristics of these films were also described. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 29 (2004), S. 0 
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Events that induce expression of the metallothionein (MT) gene, such as injection of cadmium chloride, cold stress or topical application of 1,25-dihydroxyvitamin D3, can deplete the number of ultraviolet (UV) B-induced sunburn cells (SBC) in mouse skin in vivo. MT-null mouse skin explants exhibit reduced tolerance to UVB injury in vitro. However, the in vivo response of MT-null mice to UVB injury has not been investigated. In the present study, we investigated the role of the MT gene on UVB injury in vivo. MT-null mice that are deficient in MT-I and MT-II genes were studied and compared with homozygous wild-type mice. Mouse dorsal skin was irradiated with 0.05, 0.70 and 1.40 J/cm2 UVB. The thickness of the dorsal skin was measured with a spring micrometer before and 24 h after UVB irradiation. In addition, SBC were counted 24 h after UVB irradiation. No significant difference was found in the change of skin thickness between MT-null mice and control mice irradiated with low-dose UVB (0.05 J/cm2) (Student's t-test, t = 1.519, P = 0.167). At higher doses (0.70 and 1.40 J/cm2), the skin of MT-null mice became much thicker than that of control mice (Student's t-test, t = 6.576, P 〈 0.01 and t = 3.142, P = 0.007, respectively). More SBC were detected in MT-null mice skin irradiated with the highest dose of UVB (1.40 J/cm2) (Student's t-test, t = 4.258, P 〈 0.01). These results suggest that the MT gene in mice has a photoprotective role in vivo.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1392-1395 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study the size effects in ferroelectric thin film, we measured the optical transmittance and Raman spectra in BaTiO3 thin films deposited by the rf-magnetron sputtering technique on fused quartz and (111) Si substrates. A variation in the energy gap and Raman peaks with film thickness and grain size was observed and the possible origin was analyzed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1515-1525 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic sources based upon resonant tunneling diodes (RTDs) usually generate power by establishing limit cycles which exchange energy with storage elements in an external biasing circuit; hence, the output power in this type of implementation will always be limited by extrinsic effects. We verify the presence of multiple energy-storage mechanisms solely within the RTD and characterizes the interdependencies necessary to induce intrinsic oscillations observed in quantum mechanical simulations. Specifically, we show that a nonlinear "access'' resistance and quantum-well inductance is responsible for the hysteresis, "plateaulike'' behavior, and bistability associated with the intrinsic current–voltage (I–V) characteristic. Furthermore, a new circuit-level representation which accurately incorporates the nonlinear dependencies into these heretofore "linear'' equivalent-circuit elements is used to demonstrate the different roles, as well as the degree of cooperative interplay, of the intrinsic oscillations and hysteresis in determining the overall I–V characteristics of the RTD.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 93-95 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pump-and-probe technique was used to investigate shock effects on the photoluminescence spectra (∼833 nm) at T=80 K due to the direct transition E0 from the Γ6 conduction band to the Γ8 fourfold degenerate top valence band in GaAs. Under the shock loading condition, the photoluminescence peak was observed to blue shift and split into two components, corresponding to the transitions from the Γ6 conduction band to the valence heavy- and light-hole subbands, because of symmetry breaking by the uniaxial shock compression along the [001] direction. From the blue shift of the photoluminescence peaks, we deduced our picosecond-laser-driven shock pressure of ∼10 kbar.
    Type of Medium: Electronic Resource
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