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  • 1
    Electronic Resource
    Electronic Resource
    Chemical and electrical properties of interfaces between deposited insulators and La2CuO4 (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1764-1767 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-insulator-semiconductor capacitors have been fabricated using plasma enhanced chemical vapor deposition of Si3N4 and SiO2 insulators on La2CuO4 semiconducting single crystals. Auger electron spectroscopy was used to characterize the insulator-semiconductor interface after annealing at several temperatures. Copper segregation and oxygen out-diffusion were observed and the Si3N4-semiconductor interface was found to be more stable than the SiO2-semiconductor one.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351211
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Improved electron-beam patterning of Si with self-assembled monolayers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4245-4247 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A set of processes has been explored that enhances the utility of self-assembled-monolayer electron-beam resists for patterning silicon. A self-assembled monolayer resist of octadecylsiloxane was exposed using a scanning electron microscope with a 20 keV beam energy and dose of 320 μC/cm2. After the patterned monolayer was developed using ultraviolet light and ozone, it served as a wet etch mask for the underlying native oxide. Linewidths of ∼30 nm were etched in silicon using the patterned oxide as a reactive ion etch mask. The maximum etch depth achieved in silicon was 90 nm using this process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116959
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  • 3
    Electronic Resource
    Electronic Resource
    Sub-10 nm lithography with self-assembled monolayers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1504-1506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dots demonstrating critical resist dimensions of approximately 5 to 6 nm were formed in an octadecylsiloxane monolayer on silicon by electron beam exposure using a digital scanning electron microscope at 20 keV beam energy. The patterned dots were observed by imaging with an atomic force microscope (AFM). The electron beam size was measured to confirm that it is not the limiting factor in the exposure resolution. The limit that prevents the observation of smaller structures is either the small contrast in the AFM imaging for smaller dots or an intrinsic material limit caused by the secondary electron range. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115680
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy based lithography of octadecanethiol on Au and GaAs (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 974-976 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated that low energy electron beams (≤10 eV) from a scanning tunneling microscope (STM) can be used to modify a surface of self-assembled monolayers of octadecanethiol [ODT, CH3(CH2)17SH] on gold and GaAs. STM modification in air was used to produce grating patterns up to 140 μm in total size. Line sizes as small as 15 nm were produced in ODT on GaAs at a bias of 10 V, and slightly larger sizes were produced on the gold substrate. Biases of greater than 4 V are necessary for the fabrication of these raised lines, as observed with an atomic force microscope (AFM). The patterns in ODT on gold were successfully transferred into the gold layer with a wet chemical etch demonstrating that the monolayer performs as a positive electron beam resist.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113012
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    Paper (German National Licenses)
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