Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2493-2495 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a Si metal-oxide-semiconductor field-effect transistor with a 20-nm channel length using a novel step/edge technique. An Al gate is evaporated onto a step in the SiO2 gate oxide. A second Al gate, separated from the first by a plasma-enhanced chemical-vapor-deposited SiO2 layer, provides inversion layer extensions of the source and drain contacts. Electrical conductance measurements indicate a channel length approximately equal to the fabricated gate length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346512
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Plasma chemical aspects of magnetron ion etching with CF4/O2 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2518-2522 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetron plasmas are of great current interest for semiconductor manufacturing applications because of their high ion density and low operating pressure. We have studied the properties of a magnetron ion etching system using CF4 and CF4/O2 with respect to the plasma chemistry and the interaction of the plasma with both the etched substrate and the chamber walls. The higher dissociation and ionization rates lead to significant changes in the species present in the plasma as compared to a conventional reactive ion etching (RIE) plasma. The F atom concentration in a CF4 magnetron plasma is much higher than in a RIE plasma. The addition of O2 leads to only a small further enhancement and produces a decrease in the Si etch rate. The highly dissociated species in the magnetron plasma produce less C-F polymer, both on the wafer and on the chamber walls, relative to RIE. Sputtering of Al from the electrode produces a substantial deposit of AlFx on the chamber walls, but not on the wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339463
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Chemical and electrical properties of interfaces between deposited insulators and La2CuO4 (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1764-1767 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-insulator-semiconductor capacitors have been fabricated using plasma enhanced chemical vapor deposition of Si3N4 and SiO2 insulators on La2CuO4 semiconducting single crystals. Auger electron spectroscopy was used to characterize the insulator-semiconductor interface after annealing at several temperatures. Copper segregation and oxygen out-diffusion were observed and the Si3N4-semiconductor interface was found to be more stable than the SiO2-semiconductor one.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351211
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Resistivity of AuIn2+δ thin films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2041-2045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resistivity and residual resistance ratio of 31-nm films of AuIn2+δ have been measured for a series of precision vacuum-deposited films covering the range of −0.04≤δ≤0.12. Both the resistivity and the resistance ratio exhibit a strongly peaked dependence on δ around δ=0. The results are analyzed in terms of the Mayadas–Shatzkes theory of scattering in thin films which includes the effects of both surface and grain boundary scattering. The dominant contribution to the resistivity is due to grain boundary scattering. The grain boundary scattering coefficient is unusually large compared to published results on single-phase metal films. These findings are interpreted in relation to the structure of the films and to the presence of second-phase material (AuIn or In) in the grain boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337206
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Technique for selective etching of Si with respect to Ge (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2328-2329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique to selectively etch silicon with respect to germanium is described. The method relies on an observed small difference in the effects of polymeric etch-inhibiting layers on the two materials. In a CF4/H2 plasma, the observed polymer point for Ge is 1–3% lower than for Si. This produces a narrow process window in which Si is etched while etching of Ge is suppressed. This technique has applications to etching of pure Si layers over Ge as well as Si-Ge alloys for device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100269
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Low-rate plasma oxidation of Si in a dilute oxygen/helium plasma for low-temperature gate quality Si/SiO2 interfaces (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 619-621 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-rate plasma oxidation of Si, involving a small oxygen concentration in a low-power He plasma at low processing temperatures (∼350 °C), is shown capable of producing excellent interface properties, good uniformity, and low defect density. As an interfacial layer for plasma-enhanced chemical vapor deposited (PECVD) SiO2 films, the plasma oxide is key to achieving high quality composite (plasma oxide/PECVD) oxide structures, which essentially match the electrical quality of thermal oxides. Such low-temperature oxide films are suitable for critical device applications, such as the gate oxide in metal-oxide-semiconductor devices and the base passivation layer in advanced bipolar devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104547
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Use of electron-beam charging for in-process inspection of silicide complementary metal-oxide-semiconductor gate electrode isolation (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 312-314 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inspection of complementary metal-oxide-semiconductor circuits by electron-beam charging is demonstrated. Isolation of the gate electrodes used in the actual circuits is verified. The inspection is done entirely without contact, without removing wafers from the clean room, and prior to metal and interlevel dielectric deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107922
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...