Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 2493-2495
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have fabricated a Si metal-oxide-semiconductor field-effect transistor with a 20-nm channel length using a novel step/edge technique. An Al gate is evaporated onto a step in the SiO2 gate oxide. A second Al gate, separated from the first by a plasma-enhanced chemical-vapor-deposited SiO2 layer, provides inversion layer extensions of the source and drain contacts. Electrical conductance measurements indicate a channel length approximately equal to the fabricated gate length.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346512
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