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  • 1
    Electronic Resource
    Electronic Resource
    A photoemission investigation of surface processes affecting the reactive ion etching of TiSi2 in CF4 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2951-2956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission was used to probe the surface modifications which occur while etching TiSi2 in CF4 plasmas. Fluorination of the silicide leads to the depletion of Si from the surface region and the formation of a relatively thick (∼15–20 A(ring)) overlayer with an average stoichiometry of TiF3. An identical overlayer also forms on pure Ti. The overlayer is primarily composed of a single fluorinated species and apparently does not contain a distribution of different species as in the case of fluorinated Si. This observation strongly suggests that the limiting factor in the etching of these materials is the further reaction/sputtering of this stable, nonvolatile fluoride. Also, as in the case of Si etching in halocarbon plasmas, CFx films were found to form with increasing addition of H2. Significant differences in the quantity and composition of the films were found compared to those formed on Si substrates, with Si exhibiting a higher tendency to promote CFx film growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342742
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Initial etching of GaAs (001) during H2 plasma cleaning (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2994-2998 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial etching of GaAs (001) during remote H2 plasma etching for oxide removal was examined using atomic force microscopy, coupled with in situ reflection high energy diffraction and Auger spectroscopy. Localized etching of the GaAs surface is particularly evident for etch temperatures below ∼650 K and leads to the formation of etch pits 5–10 nm deep and 20–50 nm in diameter. Etch pit formation was found to occur well before complete oxide removal. The development of etch pits is influenced by surface mis-cut steps, possibly due to increased hydrogen incorporation into the near surface at surface defects such as steps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287125
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Mg/GaAs(001): A highly anisotropic reaction morphology (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1754-1756 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction of Mg thin films with a Ga-stabilized 4×2 GaAs(001) surface was observed to produce elongated, wire-like structures with widths on the order of 50 nm and lengths up to 1000 nm. These structures are composed of an epitaxial, cubic phase and develop asymmetrically, with the elongated direction along GaAs[110]. In situ electron diffraction, Auger spectroscopy, and ex situ atomic force microscopy were used to investigate this interesting reaction morphology. A potential formation mechanism is proposed in which migration of Ga or Ga-rich "droplets" across the GaAs surface leads to the formation of a ridge of Mg3As2 that is aligned preferentially along [110] due to strain and/or chemical anisotropy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124809
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  • 4
    Electronic Resource
    Electronic Resource
    Medium energy ion scattering analysis of reactive ion etched Si(001) surfaces (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2317-2319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon surfaces reactive ion etched in CF4/H2 plasmas have been examined using medium energy ion scattering and core level photoemission. Surfaces analyzed in ultrahigh vacuum have a significantly higher fluorine content than surfaces that have been exposed to air prior to analysis. In addition, an unusually large cross section exists for ion beam desorption of some, but not all, of the fluorine. Based on core level shifts, we demonstrate that fluorine desorption arises from both the fluorocarbon film and the underlying fluorosilyl layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100265
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  • 5
    Electronic Resource
    Electronic Resource
    Technique for selective etching of Si with respect to Ge (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2328-2329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique to selectively etch silicon with respect to germanium is described. The method relies on an observed small difference in the effects of polymeric etch-inhibiting layers on the two materials. In a CF4/H2 plasma, the observed polymer point for Ge is 1–3% lower than for Si. This produces a narrow process window in which Si is etched while etching of Ge is suppressed. This technique has applications to etching of pure Si layers over Ge as well as Si-Ge alloys for device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100269
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  • 6
    Electronic Resource
    Electronic Resource
    Substitution-induced mid-gap states in R x Ba1−x TiO3−δ whereR = Y, La, and Nd (1994)
    Springer
    Journal of superconductivity 7 (1994), S. 917-920 
    Details
    ISSN: 1572-9605
    Keywords: Mixed oxides ; doping ; electronic structure ; photoemission
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Changes induced in the electronic structure of BaTiO3 by substitutions of R = Y, La or Nd for Ba to form the mixed oxides R x Ba1−x TiO3−δ have been investigated using ultraviolet photoelectron spectroscopy. Substitution of formally R+3 ions for Ba+2 leads to the introduction of filled states in the band gap that are shown by resonant photoemission measurements to have significant Ti 3d character, consistent with a Mott-Hubbard insulator description for these oxides. It is suggested that the dominant factor is electron-electron correlation and this leads to the estimatesU∼Δ∼3 eV for this system, whereU is the correlation energy for the 3d and Δ is the charge transfer energy. Changes are observed in the photoelectron spectral shape for these states as a function of increasing substitution in the Nd system and discussed in the context of the opening of the Hubbard gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00732271
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    Paper (German National Licenses)
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