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  • 1
    Electronic Resource
    Electronic Resource
    A photoemission investigation of surface processes affecting the reactive ion etching of TiSi2 in CF4 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2951-2956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission was used to probe the surface modifications which occur while etching TiSi2 in CF4 plasmas. Fluorination of the silicide leads to the depletion of Si from the surface region and the formation of a relatively thick (∼15–20 A(ring)) overlayer with an average stoichiometry of TiF3. An identical overlayer also forms on pure Ti. The overlayer is primarily composed of a single fluorinated species and apparently does not contain a distribution of different species as in the case of fluorinated Si. This observation strongly suggests that the limiting factor in the etching of these materials is the further reaction/sputtering of this stable, nonvolatile fluoride. Also, as in the case of Si etching in halocarbon plasmas, CFx films were found to form with increasing addition of H2. Significant differences in the quantity and composition of the films were found compared to those formed on Si substrates, with Si exhibiting a higher tendency to promote CFx film growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342742
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Sub-μm linewidth input coils for low Tc integrated thin-film dc superconducting quantum interference devices (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 336-338 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have, for the first time, demonstrated integrated dc superconducting quantum interference devices (SQUIDs) with input coils of linewidth down to 0.5 μm. The SQUID inductance L consists of a single octagonal washer or two or four such washers configured in parallel. The input coil of inductance Li, which couples to L with a mutual inductance of Mi, consists of fine-line octagonal spiral(s) fabricated in close proximity to the washer(s). For a two-washer SQUID with twin 80-turn, 0.5 μm spirals, Li=2.5 μH, Mi=12.7 nH, L=109 pH, and the coupling constant k2=0.85. This entire device occupies an area of less than 0.2 mm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107929
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    Paper (German National Licenses)
    Fulltext
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