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  • 1
    Electronic Resource
    Electronic Resource
    A low power 2.45 GHz ECR ion source for multiply charged ions : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2541-2543 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An electron-cyclotron-resonance ion source (ECRIS) designed for use on a high voltage terminal that has limited power availability and space has been built. To reduce the power consumption of the ion source, the necessary magnetic fields were produced entirely by permanent magnets. Eighteen FeNdB magnets divided into three hexapolar arrangements yielded a min-B structure with an axial magnetic mirror ratio of 4:1. The microwave power at a frequency of 2.45 GHz with up to 300 W cw was supplied to the plasma by means of a slotted line radiator. This antenna, known as a Lisitano-Coil, allowed the use of a plasma vessel much smaller in diameter than is usually required by the wavelength of the utilized microwaves. The ion source produced stable beams of multiply charged ions at various intensities up to a total ion current of 8 mA for oxygen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142882
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  • 2
    Electronic Resource
    Electronic Resource
    Vapor phase hydrocarbon removal for Si processing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2095-2097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultraviolet/Oxygen (UV/O2) based vapor phase cleaning of Si(100) surfaces dosed with specific organic molecules has been studied by surface and gas phase analytical techniques. The treatment results in chain scission and carbon volatilization as CO and CO2. At room temperature partial trapping of carbon-containing species in the oxide is observed, while at elevated temperatures complete hydrocarbon removal occurs. UV/O2-cleaned samples closely resemble those produced by the standard RCA clean in terms of hydrocarbon removal and oxide formation and this process appears suitable as vapor phase final Si wafer clean.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103952
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Chemistry of fluorine in the oxidation of silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2975-2977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical environment of fluorine in the oxide layer of metal-oxide-semiconductor (MOS) structures has been examined by surface analytical spectroscopies. HF treatment of Si(100) results in subsurface SiF formation. Upon oxidation, oxyfluoride moieties are formed with a significant accumulation of fluorine throughout the oxide layer. These changes are correlated to the electrical integrity of MOS interfaces by performing Fowler–Nordheim electron injection studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104686
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  • 4
    Electronic Resource
    Electronic Resource
    Defect formation in SiO2/Si(100) by metal diffusion and reaction (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 589-591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The decomposition of SiO2 films on Si(100) during ultrahigh vacuum anneal is found to be strongly enhanced by monolayer amounts of impurities deposited on the SiO2 surface. s- and p-band elements initiate decomposition via formation of volatile suboxides by surface reaction, whereas most transition metals decompose the oxide via laterally inhomogeneous growth of voids in the oxide. Transition metals need to diffuse to the SiO2/Si interface to enhance oxide decomposition via formation of volatile SiO. It is inferred that transition metal particles should be efficient in creating electrical defects in gate oxide layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100630
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  • 5
    Electronic Resource
    Electronic Resource
    Kinetics of silicon epitaxy using SiH4 in a rapid thermal chemical vapor deposition reactor (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 629-631 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The equilibrium hydrogen surface coverage on Si(100) during silicon epitaxy using SiH4 has been measured in a rapid thermal chemical vapor deposition reactor. The hydrogen coverage could be "frozen out'' completely on the surface by a rapid cool-down and pump-down of the reactor up to temperatures of (approximately-equal-to)575 °C; at temperatures above 575 °C only partial "freeze-out'' is achieved. Surface hydrogen was titrated in situ using the reactor as a thermal desorption spectrometer. Epitaxial silicon films were grown in the temperature range 450–700 °C and the film growth kinetics was correlated with the equilibrium hydrogen coverage. The growth mechanism changes from the low-temperature regime, where the surface is hydrogen covered, to the high-temperature regime, where the surface is essentially clean.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102719
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  • 6
    Electronic Resource
    Electronic Resource
    Ultraclean, integrated processing of thermal oxide structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1254-1256 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultraclean, integrated metal-oxide-semiconductor oxide fabrication has been investigated for the first time by combining (i) surface cleaning in inert ambient, (ii) wafer transfer through ultrahigh vacuum, and (iii) thermal oxidation in an ultrahigh vacuum-based reactor. Device quality oxide structures are obtained (evidenced by dielectric breakdown characteristics for Al gate capacitors) under suitable conditions, while under other circumstances chemical mechanisms severely degrade electrical performance; even in ultraclean environments, impurity-related Si etching reactions before oxidation degrade oxide quality, but this can be avoided by appropriate use of passivating oxide films which prevent roughness associated with etching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103501
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  • 7
    Electronic Resource
    Electronic Resource
    Stacking-fault-induced defect creation in SiO2 on Si(100) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1892-1894 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Decomposition of SiO2 films on Si(100) during ultrahigh-vacuum anneal has been shown previously to be preceded, at low anneal temperatures, by electrical defect creation in metal-oxide-semiconductor structures. In this letter, the presence of stacking faults in a Si substrate is shown to be related to enhanced oxide decomposition during high-temperature anneal. Decomposition is enhanced because of the creation of a larger number of nucleation centers for the formation of volatile SiO. These nucleation centers are the result of the metals gettered in the stacking faults close to the SiO2/Si interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99734
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  • 8
    Electronic Resource
    Electronic Resource
    Dopant redistribution at Si surfaces during vacuum anneal (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4619-4625 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured dopant distribution profiles by spreading resistance and secondary ion mass spectroscopy (SIMS) profiling at silicon surfaces annealed to high temperature in vacuum. Accumulation of electrically active p-type dopants is found to occur. The p-type dopant is identified by SIMS and by its diffusion characteristics as being boron. The measured doping profiles can be interpreted as indicating that the chemically cleaned surface contains boron impurities in the 1012/cm2 range that become electrically activated and diffuse into the substrate during high-temperature anneals. It is concluded that the boron exists initially in an oxidized state at the surface. Borosilicate parts present in any standard ultrahigh vacuum system are identified as a source of the pollution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338372
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  • 9
    Electronic Resource
    Electronic Resource
    Hydrocarbon reaction with HF-cleaned Si(100) and effects on metal-oxide-semiconductor device quality (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 108-110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface reactivity of hydrogen-passivated, HF-cleaned Si(100) towards hydrocarbon adsorption is examined by surface analysis; most hydrocarbons adsorb on the surface. Dangling bonds formed during thermal processing react with fragmented organic molecules forming SiC. Metal-oxide-semiconductor devices fabricated on contaminated surfaces are degraded, with the degree of degradation depending on the nature of the contaminant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105560
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  • 10
    Electronic Resource
    Electronic Resource
    Kinetics of nucleation and growth of Si on SiO2 in very low pressure SiH4 chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3035-3037 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial growth kinetics for SiH4 chemical vapor deposition of Si on SiO2 at low temperature (500–600 °C) have been revealed using rapid thermal UHV-CVD, together with in situ H2 thermal desorption spectroscopy to titrate the amount of exposed Si surface. In the few mTorr pressure range, the reaction is heterogeneous, i.e., dominated by surface reaction. Below ∼0.7 monolayer Si coverage, the growth kinetics is rapid (∼t4), indicating spontaneous generation of new nuclei, while at higher coverage Si island growth dominates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108001
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