Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 1903-1904
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Metal-oxide-silicon capacitors with TiSi2 gate were studied to determine the relation between gate-induced stress and the electrical characteristics of the system. TiSi2 is found to exert a compressive stress on the oxide film. With increasing silicide thickness, i.e., larger stress, the rate of trapping of injected electrons, which is a measure of the defect (trap) density, was found to increase. Moreover, the rate of generation of Si-SiO2 interface states upon electron injection shows a similar correlation with the stress.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103040
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