Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 629-631
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The equilibrium hydrogen surface coverage on Si(100) during silicon epitaxy using SiH4 has been measured in a rapid thermal chemical vapor deposition reactor. The hydrogen coverage could be "frozen out'' completely on the surface by a rapid cool-down and pump-down of the reactor up to temperatures of (approximately-equal-to)575 °C; at temperatures above 575 °C only partial "freeze-out'' is achieved. Surface hydrogen was titrated in situ using the reactor as a thermal desorption spectrometer. Epitaxial silicon films were grown in the temperature range 450–700 °C and the film growth kinetics was correlated with the equilibrium hydrogen coverage. The growth mechanism changes from the low-temperature regime, where the surface is hydrogen covered, to the high-temperature regime, where the surface is essentially clean.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102719
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