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  • 1
    Electronic Resource
    Electronic Resource
    Wannier–Stark localization in a strained-layer InxGa1−xAs/InyGa1−yP superlattice (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7161-7163 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an observation of the Wannier–Stark effect in a strained InGaAs/InGaP superlattice grown on a GaAs substrate. A blueshift of the effective absorption edge is observed in room and low-temperature photocurrent and transmission measurements. A ∼2000 cm−1 absorption change due to the transition of the absorption edge from a broad to a sharp quantum well-like excitonic shape was obtained for as little as a 2 V change in bias voltage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361487
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of Si-implanted InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3753-3757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature integrated photoluminescence of Si-implanted n-type and semi-insulating wafers of single-crystal InP has been investigated as a technique for characterizing the quality of ion-implanted and annealed material. It was found that the intensity of the luminescence is a good indicator of the quality of the annealed samples. Using both rapid thermal annealing and conventional furnace annealing, not only was it possible to monitor the progressive activation of the implanted impurities, but we were also able to characterize the degradation occurring in the InP crystal due to the thermal exposure and to compare the results using different methods of surface protection. Combined with progressive wet etching of the implanted layers, it was also possible to use the photoluminescence response to spatially profile the activation and the degradation of the wafers. The results suggest that annealing, in general, is not able to restore the quality of the original unimplanted semiconductor and that even short transient anneal cycles can lead to detectable thermally induced material degradation, which extends many micrometers into the InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344036
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  • 3
    Electronic Resource
    Electronic Resource
    Surface characterization of InP using photoluminescence (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1995-2004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) measurements have been performed on InP samples in situ during various surface treatments including chemical etching, wet anodization, and low-pressure chemical vapor deposition. It was found, in agreement with previously published results, that the magnitude of the PL signal varies markedly with surface treatment due presumably to changes in either surface-state density, and/or surface potential. In an attempt to assess the effectiveness of this noninvasive method as a tool for characterizing and monitoring the progressive development of a semiconductor surface during processing, a number of experiments on InP have been performed. The results indicate that although some uncertainty may exist in assigning a mechanism for the PL change in any given experiment, the general trend appears to be that surface degradation results in a reduced signal. As a result, process steps which enhance the PL intensity are likely to be beneficial in the preparation of a high-quality interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337995
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  • 4
    Electronic Resource
    Electronic Resource
    A low drive voltage electroabsorption modulator using an InGaAs/InP superlattice (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5895-5897 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectral transmission, reflection, and photocurrent absorption data obtained on gas-source molecular beam epitaxy grown InGaAs/InP multiple quantum well (MQW) and superlattice p-i-n diode structures demonstrate, for the first time in this materials system, that similar modulation to MQW structures can be achieved using superlattices, but at significantly lower operating voltages. Specifically, we have observed photocurrent absorption changes of as much as 58%, transmission changes of 8.2%, and reflection changes of 32% for applied biases of only 4 V, in nonresonant modulators operating at a wavelength ∼1.5 μm. These results encourage the possibility of employing such devices in fast, high density optical modulator arrays operating over the 1.3–1.6 μm range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355305
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  • 5
    Electronic Resource
    Electronic Resource
    Insulated-gate multiple quantum well optical modulator on InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1964-1966 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Insulated-gate metal-insulator-semiconductor (MIS) diodes have been fabricated on multiple quantum well stacks of InP/InGaAs grown by gas-source molecular beam epitaxy. These devices have shown excitonic resonances and optical modulation spectra in pass-through operation similar in shape, but smaller in magnitude, to what has been previously reported with p-i-n and Schottky diode structures. Compared to these other devices the MIS modulator has the advantage of being totally planar with excellent interdevice electrical isolation suggesting its suitability for high complexity array applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103981
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  • 6
    Electronic Resource
    Electronic Resource
    Sulfur as a surface passivation for InP (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 134-136 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near ideal passivated surface prior to chemical vapor deposition of SiO2 . Results of high-frequency and quasi-static capacitance-voltage measurements as well as enhancement mode insulated gate field-effect transistor (FET) transconductance and drain current stability studies all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular we have measured surface state values in the range of 1010 to a few 1011 cm−2 eV−1 and enhancement mode FET drain current drifts of 〈5% over a 12 h test period.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100575
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  • 7
    Electronic Resource
    Electronic Resource
    Remote gate capacitance-voltage studies for noninvasive surface characterization (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 987-989 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A measurement technique has been developed which allows noncontact capacitance-voltage measurements to be made using a gate electrode located remote from the semiconductor surface under study. With gate electrodes ∼0.5 mm in diameter and gate to semiconductor separations ∼1500 A(ring) we have been able to generate data entirely comparable to that obtained with integrated metal-insulator-semiconductor structures but with the advantage that we have access directly to the free-semiconductor surface. We have applied this technique to bulk single-crystal Si and InP samples and have been able to determine the effects of varying chemical treatments on the surface trap densities of the free surface. H2O2, for example, has been shown to create a poor InP surface whereas NRL etchant has yielded a surface seemingly quite close to the ideal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98983
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  • 8
    Electronic Resource
    Electronic Resource
    Gated photoluminescence method for interface state density determination (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 754-756 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the use of gated photoluminescence (PL) to estimate interface state density in III–V metal-insulator-semiconductor (MIS) structures. Low-temperature PL measurements have been recorded as a function of bias applied to the semi-transparent gate of a MIS diode. An analysis of these data resulted in surface state densities in the low 1010/cm2 eV range on sulfur passivated SiO2 coated InP. The present technique is more sensitive than the conventional 1 MHz capacitance-voltage (C-V) method, and less dependent on low leakage currents in the dielectric, when compared to the quasi-static C-V technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106559
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  • 9
    Electronic Resource
    Electronic Resource
    Role of polysulfides in the passivation of the InP surface (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 437-439 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Motivated by the disagreement and irreproducibility observed by different groups, including ours, on the effects of passivating compound semiconductors with sulfur, we have attempted in this work to see if dissimilarities in the starting solution can account for variations in final electrical results. Specifically we have tried passivating InP with different ammonium sulfide solutions for metal-insulator–semiconductor (MIS) type applications. We have observed that InP treated with a polysulfide solution, prepared by bubbling O2 through ammonium sulfide with excess dissolved sulfur results in excellent interfaces, whereas polysulfide-free solutions have little effect. Interface state densities in the high 1010 cm−2 eV−1 as judged by quasistatic capacitance-voltage measurements were obtained on polysulfide treated MIS structures coated with indirect plasma-enhanced chemical vapor deposited SiO2. Low-temperature photoluminescence spectra show marked differences on polysulfide-treated InP when compared to InP that was treated with commercially available ammonium sulfide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105455
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