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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7422-7423 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sidegating effect on the Schottky barrier in ion-implanted GaAs was investigated with capacitance-voltage profiling at various negative substrate voltages. It was demonstrated that the negative substrate voltage modulates the Schottky depletion region width as well as the space charge region at the substrate-active channel interface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5266-5269 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron photoionization cross-section spectra of the Si:Pd EA level at various temperatures are obtained for the first time. It is shown that the cross-section spectra around the threshold energy shift to lower energy when the temperature rises. Instead of the variation of the energy gap or the broadening effect of lattice relaxation, photothermal excitation via an excited state at 45 meV below the bottom of the conduction band causes this energy shift. The energy from the ground state to the excited state derived from both optical and thermal data is 370 meV.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1968-1970 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have been characterized by optical transient current spectroscopy (OTCS). Compared with the OTCS result of the SI InP prepared by annealing in pure phosphorus (PP) ambiance, the IP SI InP presents only two traps with activation energies of 0.20 and 0.63 eV, respectively. The results suggest that the diffusion of Fe-atoms suppresses the formation of a few defects in the IP SI InP. The nature of deep levels in the IP and PP SI InP has been discussed on the basis of these results. The relation between material property and defects in those SI InP has also been revealed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 954-957 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new model of "new donors'' is presented, based on electrical, infrared measurements, transmission electron microscopy, and high-resolution electron microscopy observations on Czochralski-grown silicon single crystals containing "new donors.'' In this model, the electrical activity of "new donors'' originates from the uncoordinated Si dangling bonds on small dislocation loops resulting from oxygen precipitation. In comparison with other models, the present model can better explain the experimental results of the heat treatment Czochralski-grown Si wafers.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4555-4559 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel luminescence technique named photothermal luminescence has been developed. For the photothermal luminescence spectroscopy, the emission signal is caused by electronic transitions via the absorption of photons, followed by thermal excitation via electron-phonon interactions, and is monitored as a function of the excitation photon energy, in which the excitation photon energy is less than that of the emission signal. This new technique has been applied to the study of electronic transitions in GaAs/AlxGa1−xAs quantum wells. In addition to the observation of the n=1 electron-heavy-hole 1s and 2s exciton recombinations, a previously unreported fine structure in the n=1 electron-heavy-hole 1s exciton spectrum has also been observed. By measuring the temperature dependence of the spectra on different quantum wells, we suggest that the fine structure is due to the formation of the standing waves of acoustic vibrations in GaAs/AlxGa1−xAs quantum wells. We emphasize that due to the underlying mechanism of the technique, the photothermal luminescence provides a powerful tool to investigate the processes of electron-phonon interactions.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 647-650 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the optical properties of high density electron gas in GaAs/Al0.3Ga0.7As modulation doped quantum wells by using the photoluminescence measurements with the pumping photon energies above and below the band gap of the barrier and the resonant Raman scattering. We point out that the previous assignment of the transition between the second conduction subband and the ground-state heavy-hole subband in the photoluminescence spectra may be flawed. Thus, there is no large breakdown of the parity selection rule of the optical matrix element in quantum wells even if the carrier concentration is as high as 1012 cm−2. Our results are consistent with the theoretical investigation. We have also estimated the band gap shrinkages due to many-body interactions, which are comparable with the previous calculations.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2135-2137 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free-space micro-optical systems on a chip containing three-dimensional microgratings have been demonstrated using surface-micromachining technique. The micrograting is integrated with a rotary stage, a collimating micro-Fresnel lens, and an edge-emitting laser held by three-dimensional alignment structures on a single Si substrate. Diffraction patterns for various grating rotation angles are observed. Another optical interconnect module consisting of three cascaded microgratings is also demonstrated. The micrograting is a basic building block for many micro-optical systems and is very attractive for applications in microspectrometers, free-space optical interconnect, optoelectronic packaging, and wavelength-division multiplexed integrated micro-optical systems. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1521-1524 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties and structural defects of Te-doped GaAs grown in space have been investigated by using various techniques. The experimental results confirm that the microgravity conditions offer some advantages for the melt growth of III-V compound semiconductor materials; improvements of homogeneity and perfection as well as purity of the space GaAs single crystal are expected.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2878-2879 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium antisite defect InP-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The InP defect is enhanced by the indium interstitial that is caused by the kick out of In and the substitution at the indium site of Fe in the diffusion process. Through these Fe-diffusion results, the nature of the defects in annealed undoped SI InP is better understood. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shubnikov–de Haas measurements were carried out for In0.52Al0.48As/InxGa1−xAs metamorphic high-electron-mobility-transistor structures grown on GaAs substrates with different indium contents and/or different Si δ-doping concentrations. Zero-field (B→0) spin splitting was found in samples with stronger conduction band bending in the InGaAs well. It was shown that the dominant spin splitting mechanism is attributed to the contribution by the Rashba term. We found that zero-field spin splitting not only occurs in the ground electron subband, but also in the first excited electron subband for a sample with Si δ-doping concentration of 6×1012 cm−2. We propose that this In0.52Al0.48As/InxGa1−xAs metamorphic high-electron-mobility-transistor structure grown on GaAs may be a promising candidate spin-polarized field-effect transistors. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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