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  • 1
    Electronic Resource
    Electronic Resource
    Texture-induced asymmetric reactions in TiN/Al–Cu/TiN (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7419-7421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally induced reactions in TiN/Al–Cu/TiN have been investigated. It is observed that the amount of the reactions is different at the two interfaces between Al–Cu and TiN. While there is minimal reaction between Al–Cu and the TiN overlayer, the reaction between Al–Cu and the TiN underlayer increases the sheet resistance of Al–Cu by as much as 15%. It is further shown that the asymmetric reactions are most likely caused by the different degree of (111) texture of TiN grown on amorphous SiO2 and textured, polycrystalline Al–Cu. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360398
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  • 2
    Electronic Resource
    Electronic Resource
    Charge-defect thermodynamic equilibrium and "metastable'' defects in amorphous silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 768-772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thermodynamic equilibrium description of the high-temperature (150–250 °C) steady-state behavior of light-induced defects in amorphous silicon is presented. The entropy and enthalpy of dangling-bond formation are quantified. In contrast to the behavior of vacancies in single-crystalline silicon the creation of the dangling-bond defect in amorphous silicon produces negative entropy and enthalpy changes indicating that lattice relaxations contribute to the free-energy changes. Over the temperature range examined, the creation of dangling bonds lowers the free energy due to the relatively large negative enthalpy change. Practical issues such as the estimation of the saturated dangling-bond density resulting from given illumination level at temperatures too low to experimentally observe true saturation are also considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357779
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of solution polymerization kinetics by near-infrared spectroscopy. 1. Living anionic polymerization processes (1993)
    s.l. : American Chemical Society
    Macromolecules 26 (1993), S. 6237-6242 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00075a018
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence and x-ray properties of heteroepitaxial gallium arsenide on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2161-2164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the residual impurities and defects in heteroepitaxial GaAs films grown by molecular-beam epitaxy on 〈100〉 Si substrates. Low-temperature photoluminescence measurements are used to identify residual impurity and deep defect levels in unintentionally doped heteroepitaxial GaAs and compared to homoepitaxial GaAs grown under similar conditions. Scanning Lang x-ray measurements demonstrate that the heteroepitaxial layers are under biaxial tensile stress in the surface parallel direction. The presence of internal tensile stress is also corroborated by double crystal x-ray rocking curve measurement which shows tetragonal compression in the surface perpendicular direction. This is also the first reported use of interferometric techniques for studying photoluminescence properties of a wide-gap semiconductor in the near infrared region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336353
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  • 5
    Electronic Resource
    Electronic Resource
    Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1−xAs (0≤x≤0.3) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3392-3395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical and structural investigations of InAs quantum dots (QDs) covered by InxGa1−xAs (0≤x≤0.3) overgrowth layer have been systematically reported. The decrease of strain in the growth direction of InAs quantum dots covered by InGaAs layer instead of GaAs is demonstrated by transmission electron microscopy experiments. In addition, the atomic force microscopy measurement shows that the surface of InAs islands with 3-nm-thick In0.2Ga0.8As becomes flatter. However, the InGaAs islands nucleate on the top of quantum dots during the process of InAs islands covered with In0.3Ga0.7As. The significant redshift of the photoluminescence peak energy and reduction of photoluminescence linewidth of InAs quantum dots covered by InGaAs are observed. The energy gap change of InAs QDs covered by InGaAs could be explained in terms of reducing strain, suppressing compositional mixing, and increasing island height. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288225
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2048-2050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 °C, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 °C, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 °C and that of the short-wavelength quantum-dot laser previously reported. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388021
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5433-5436 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318371
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  • 8
    Electronic Resource
    Electronic Resource
    Micro-Raman characterization of structural defects in patterned GaAs-on-Si (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1631-1633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have applied micro-Raman spectroscopy to the analysis of structural quality of GaAs-on-Si where the GaAs growth was performed through openings in an amorphous mask. The presence of the symmetry forbidden transverse optic (TO) phonon band and line shape of the longitudinal optic (LO) phonon band have been used to extract information concerning the structural quality of microscopic regions of GaAs from the Raman spectra. The utility of TO to LO phonon intensity ratios as a measure of crystal quality has been corroborated by correlation to x-ray rocking curve full width. The structural quality of selectively grown GaAs as determined from first-order Raman ratios is found to degrade in the vicinity of the transition between single crystal and polycrystalline regions. This work also shows that post-growth annealing significantly improves the quality of structures with minimum feature size as small as 2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104070
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  • 9
    Electronic Resource
    Electronic Resource
    Misfit accommodation in a lattice-mismatched HgTe-CdTe superlattice/HgCdTe heterostructure grown by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1513-1515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an x-ray diffraction study of a HgTe-CdTe superlattice (SL)/HgCdTe heterostructure grown by molecular beam epitaxy (MBE). The diffraction results are used to place an upper bound on the misfit accommodation at the lattice-mismatched SL/HgCdTe interface. The misfit accommodation at the heterointerface is at least an order of magnitude less than that predicted by equilibrium misfit theory. It appears that the low substrate temperature used in MBE HgCdTe growth imposes a kinetic barrier to misfit accommodation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101592
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  • 10
    Electronic Resource
    Electronic Resource
    Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3741-3743 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-organized In0.55Al0.45As/Al0.50Ga0.50As quantum dots are grown by the Stranski–Krastanow growth mode using molecular beam epitaxy on the GaAs(311)A substrate. The optical properties of type-II InAlAs/AlGaAs quantum dots have been demonstrated by the excitation power and temperature dependence of photoluminescence spectra. A simple model accounting for the size-dependent band gap of quantum dots is given to qualitatively understand the formation of type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots driven by the quantum-confinement-induced Γ→X transition. The results provide new insights into the band structure of InAlAs/AlGaAs quantum dots. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126768
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