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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 726-731 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion into a p-type Si substrate of arsenic ions implanted into TiSi2 layers has been investigated for several thermal diffusion treatments in the 900–1100 °C temperature range. The drive-in was performed using either a rapid thermal annealing system or a traditional furnace. Shallow (20–80-nm depth) junctions were obtained with a high (1019–1020/cm3) dopant concentration at the silicide-silicon interface. The amount of diffused arsenic atoms measured by Rutherford backscattering spectrometry increases linearly with the square root of the annealing time. A similar relation was found for the amount of electrically active arsenic, as measured by Van der Pauw structure in combination with anodic oxidation. The two quantities differ and the inactive dopants precipitate in the diffused layer as seen by transmission electron microscopy. This behavior might be associated to the high tensile stress induced by the silicide layer on the surface silicon region and to its influence on the solid solubility and clustering of arsenic atoms. Precipitates are easily dissolved after thermal annealing in the absence of the TiSi2 layer.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 5526-5539 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A model for the reactions of NO+NH3 and NO+H2 has been developed for simulating the reduction of NO on Pt(100) in the 10−6 mbar pressure range for temperatures between 300 and 700 K. The model consists of seven ordinary differential equations for describing the coverage changes of six adsorbed species as well as an equation for describing the 1×1(arrow-right-and-left)hex phase transformation. Simulations of the N2 and H2O reaction rates for both reaction mixtures reproduced the hysteresis effects and the existence range for kinetic oscillations, which were found in the experiments. In addition, the occurrence of the so-called "surface explosion'' in both reaction systems is well described by the model. In contrast to the NO+CO reaction on Pt(100), where oscillations may also take place on a pure 1×1 substrate, the 1×1(arrow-right-and-left)hex phase transition occurs during oscillations for the NO+NH3 and NO+H2 reactions. The transitions between different adsorbate/substrate phases during one oscillatory cycle which are predicted by the model are in agreement with experimental observations made by photoemission electron microscopy (PEEM) for the NO+NH3 reaction. Using values for the constants which were taken from experiments, the model provided quantitative predictions of the absolute reaction rates as well as the relative rates of the competing reaction channels, e.g., N2 and NH3 production in the case of the NO+H2 reaction. The similar dynamical behavior observed in the NO+H2 and NO+NH3 reactions on Pt(100) is attributed to the insensitivity of NO reduction to the source of the hydrogen atoms.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5552-5558 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal–oxide–semiconductor capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers are presented and investigated by transmission electron microscopy and electrical measurements. The grain size distribution and the amount of crystallized silicon remaining in SRO after annealing have been studied by transmission electron microscopy, whereas the charge trapping and the charge transport through the dots in the SRO layer have been extensively investigated by electrical measurements. Furthermore, a model, which explains the electrical behavior of such SRO capacitors, is presented and discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3464-3469 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the electrical characteristics of p+–n Si junction diodes implanted with 300 keV C ions at fluences of 0.5 and 1×1015 cm−2 and annealed at 900 or 1100 °C. In all cases cross-sectional transmission electron microscopy shows an excellent crystalline quality, with no extended defects, and the C-rich region is characterized by an n-type doping. In the material annealed at 900 °C the C-rich region shows a low electron mobility and the presence of deep donor levels, and, as a consequence, the diode characteristics are nonideal. These effects can be attributed to the formation of C–Si self-interstitial-type complexes after the 900 °C anneal. At 1100 °C part of the C–Si complexes dissolve and the electrical characteristics of the materials noticeably improve. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2642-2650 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of erbium-doped semi-insulating polycrystalline and amorphous silicon containing 30 at. % oxygen is studied. The films were deposited on single-crystal Si substrates by chemical vapor deposition, implanted with 500 keV Er to fluences ranging from 0.05 to 6×1015 ions/cm2, and annealed at 300–1000 °C. Upon optical pumping near 500 nm, the samples show room-temperature luminescence around 1.54 μm due to intra-4f transitions in Er3+, excited by photogenerated carriers. The strongest luminescence is obtained after 400 °C annealing. Two classes of Er3+ can be distinguished, characterized by luminescence lifetimes of 170 and 800 μs. The classes are attributed to Er3+ in Si-rich and in O-rich environments. Photoluminescence excitation spectroscopy on a sample with 1×1015 Er/cm2 shows that ∼2% of the implanted Er is optically active. No quenching of the Er luminescence efficiency is observed between 77 K and room temperature in this Si-based semiconductor. The internal quantum efficiency for the excitation of Er3+ via photogenerated carriers is 10−3 at room temperature. A model is presented which explains the luminescence data in terms of trapping of electrical carriers at localized Er-related defects, and subsequent energy transfer to Er3+ ions, which can then decay by emission of 1.5 μm photons. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6504-6510 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature electroluminescence at 1.54 μm is demonstrated in erbium-implanted oxygen-doped silicon (27 at. % O), due to intra-4f transitions of the Er3+. The luminescence is electrically stimulated by biasing metal-(Si:O, Er)-p+ silicon diodes. The 30-nm-thick Si:O, Er films are amorphous layers deposited onto silicon substrates by chemical-vapor deposition of SiH4 and N2O, doped by ion implantation with Er to a concentration up to ≈1.5 at. %, and annealed in a rapid thermal annealing furnace. The most intense electroluminescence is obtained in samples annealed at 400 °C in reverse bias under breakdown conditions and it is attributed to impact excitation of erbium by hot carriers injected from the Si into the Si:O, Er layer. The electrical characteristics of the diode are studied in detail and related to the electroluminescence characteristics. A lower limit for the impact excitation cross section of ≈6×10−16 cm2 is obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated electrical and structural characteristics of C coimplanted GexSi1−x layers formed by high dose Ge implantation in (100) Si followed by rapid thermal annealing at 1100 °C for 10 s. In the absence of C the layers, with Ge peak concentrations of about 15 at. %, are epitaxial and fully strained but show extrinsic dislocation loops in the Ge end of range region. In C coimplanted GexSi1−x the crystalline quality of the materials is improved since the formation of defects at the end of range is suppressed and the strain is reduced. From an electrical point of view the situation is reversed. The electrical characterization of p+/n diodes shows that, without C coimplantation, in GexSi1−x the hole mobility is larger than in Si, and the bandgap narrowing results in an increase of the minority carrier concentration. Moreover, the diffusion of minority carriers does not appear to be influenced by the presence of the secondary defects at the end of range. Vice versa, in C coimplanted GexSi1−x, even if the extended defects are not present, we observe a high concentration of minority carrier recombination centers, which strongly reduce the carrier diffusion length. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1768-1770 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report initial results of a novel technique for epitaxial growth of GexSi1−x alloys on single-crystal Si. During electron beam deposition of amorphous GexSi1−x, an incident XeCl excimer laser, operating at 308 nm with a 30 ns pulse duration, melts and crystallizes the amorphous layer in situ after each ≈5 nm of deposition. This laser-induced melt extends approximately 20 nm and provides epitaxy from the underlying substrate (or previous layers) at each stage of deposition. This melt/solidification process can be repeated continuously until the final desired alloy thickness is achieved. For layers up to 260 nm with Ge concentrations of 1.5–3 at. %, MeV ion channeling and cross-sectional transmission electron microscopy confirm epitaxial growth.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 554-556 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amorphous to polycrystal transition during Kr ion beam irradiation of chemical vapor deposited silicon layers has been studied in the temperature range 320–480 °C. At each irradiation temperature the average grain diameter increases linearly with the Kr dose, while the grain density remains constant within the experimental accuracy. The growth rate follows a complex behavior which can be described by dynamic defect generation and annihilation. The absolute value of the grain growth rate is equal to that of the ion-assisted epitaxial layer by layer crystallization in the silicon (111) orientation. This result can be related to the crystal grain structure and morphology.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 472-479 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric breakdown of gate oxide layers with thickness of 35 and 9.3 nm in metal-oxide-semiconductor capacitors with a n+ polycrystalline Si/SiO2/n− Si stack was investigated. Breakdown was characterized in a particular circuit configuration by following the time evolution of voltage, current, and power through the capacitor with a time resolution of the order of 2 ns. A detailed morphological characterization of the damaged samples by emission and transmission electron microscopy is shown and discussed. The results of the morphological analysis and of the electrical measurements are quantitatively discussed by simulating, through heat-flow calculations, the time evolution of the temperature in the regions interested to the breakdown phenomenon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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