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  • 1
    Electronic Resource
    Electronic Resource
    Selective adsorption and patterning of Si nanoparticles fabricated by laser ablation on functionalized self-assembled monolayer (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 692-694 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate an in situ selective adsorption of Si nanoparticles fabricated by laser ablation on a functionalized self-assembled monolayer (SAM). Si nanoparticles adsorbed on –CH3 terminated a SAM while Si particles did not adsorb on –NH2, –F, –OH, and –COOH, terminated SAMs. The end group of a SAM solely determines the selectivity against Si nanoparticle adsorption. We utilized the screening ability of functionalized SAMs to pattern Si nanoparticles onto desired locations on a Si substrate. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388025
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  • 2
    Electronic Resource
    Electronic Resource
    Formation process of Si nanoparticles in rare gas observed by a decomposition method (1999)
    Springer
    Applied physics 69 (1999), S. S213 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 36.40.Sx; 61.46.+w; 81.20.Zx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. We have investigated the formation process of silicon nanoparticles after laser ablation of silicon targets in argon gas. The nanoparticles exhibit bright photoluminescence in the visible wavelength range and can be applied to opto-electronic devices. In order to observe silicon nanoparticles, we have developed a decomposition method. The nanoparticles were probed by detecting light emission resulting from decomposition using a second laser. This method enables us to observe nanoparticles that cannot be observed directly by the methods applied so far. We have observed that the nanoparticles grow in time periods of 1.0–1.8 ms following ablation in Ar gas at 5 Torr when Si targets are ablated at 5 J/cm2 with a pulse width of 7 ns. The nanoparticles begin to grow above ablation spots slightly apart from the targets just after thermalization of the plume. We also found that the growth is delayed at higher fluxes of ablation laser light.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003399900302
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  • 3
    Electronic Resource
    Electronic Resource
    Si nanocrystallites in SiO2 with intense visible photoluminescence synthesized from SiOx films deposited by laser ablation (1999)
    Springer
    Applied physics 69 (1999), S. S13 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.46.+w; 78.66w; 81.15.Fg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. We observed very intense and highly reproducible photoluminescence (PL) spectra for SiOx films obtained by laser ablation of Si targets in 50-mTorr oxygen gas followed by proper annealing. It was found that the PL peak continuously changes from 1.4 eV at the center of the samples to 1.8 eV at the sample edge. The optimum values of the oxygen component in SiOx was x=1.3-1.4 and the optimum annealing temperature was 1000 °C for intense PL. From transmission electron microscopy images of annealed films, Si nanocrystallites are found to be formed in the matrix of SiO2 grown from the SiOx and have diameters of 2–3 nm. These indicate that a high density of Si nanocrystallites with diameters of 2–3 nm in the SiO2 phase are probably responsible for the PL and that the Si nanostructure is well formed from the as-deposited, metastable SiOx (x=1.3-1.4) films by annealing at 1000 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003399900295
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