Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Schottky barrier height enhancement on n-In0.53Ga0.47As (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2347-2355 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier height enhancement on n-InGaAs is studied on structures with thin surface layers of different compositions. Counter-doped p+-InGaAs layers, as well as layers of n- and p-InP, n-GaAs, and n-InGaP of different thicknesses and dopant densities, respectively, were used to enhance the barrier. Titanium was used as a barrier metal to prepare Schottky diodes of different areas and the barrier height is analyzed by current-voltage measurements. It is observed that the barrier height enhancement by p+-InGaAs layers increases with the layer thickness and dopant density, respectively, and effective barrier heights up to 0.63–0.68 eV, i.e., higher values than previously reported, have been measured. The barrier height enhancement by counter-doped p+-InGaAs layers on n-InGaAs can be described by the two-carrier model. Schottky diodes with extremely low reverse current densities have been prepared, JR(1 V) =4.5×10−6 A/cm2. It is shown that lattice-matched InP surface layers can be used as an alternative to enhance the barrier height on n-InGaAs. The barrier height increases with the layer thickness up to φB=0.53–0.55 eV, i.e., up to values previously reported as barrier heights on thick n-InP. Additional barrier enhancement can be achieved by counter doping of the InP surface layer and barrier heights of 0.66 eV have been obtained by p-InP surface layers on n-InGaAs. On structures with barrier-enhanced n-GaAs layers, a remarkable decrease of the reverse current density is observed if the layer thickness is reduced to the critical layer thickness, but the barrier height is very low due to the small n-GaAs thickness. For structures with slightly lattice-mismatched n-InGaP layers (xGaP=0.11) measured barrier heights are similar to those for n-InP enhancement layers of the same thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351576
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Conduction in nonstoichiometric molecular-beam epitaxial GaAs grown above the critical thickness (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1851-1853 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Different conduction behavior is observed in nonstoichiometric (NS) molecular-beam epitaxial GaAs grown at 200 °C below and above the critical thickness. In the low-field Ohmic region only the monocrystalline part of the layer contributes to the room-temperature resistivity, but at higher temperatures the resistivity scales with the total layer thickness. In NS GaAs grown above the critical thickness, a superlinear J–Vn (n=2–3) dependence is found at intermediate fields. The prebreakdown voltage is proportional to the total thickness. This indicates that different defects control the electrical properties of the polycrystalline and monocrystalline parts of the NS GaAs. These results can be useful in the design of NS GaAs based devices, which operate at higher temperature and/or higher electric fields. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121204
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1118-1120 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of LT GaAs at low electric fields is ρ≥108 Ω cm, much higher than resulting from van der Pauw measurements. It is found that the measured resistivity decreases with increasing the LT GaAs thickness. This is explained by space-charge effect in the vicinity of n+/LT GaAs junction and subsequent suppression of hopping conduction in the high-field junction region. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119745
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    InP/InGaAs photodetector based on a high electron mobility transistor layer structure: Its response at 1.3 μm wavelength (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 106-108 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high electron mobility transistor structure. The photodetector is fabricated in the InP/InGaAs material system, without use of Al-containing layers. Optoelectronic measurements on a device with a finger spacing of 3 μm show a full width at half-maximum (FWHM) of the pulse response of ≤60 ps, which is the resolution limit of our measurement equipment. Low-temperature measurements at 40 K with electro-optical sampling at a wavelength of 890 nm show a FWHM of 1 ps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115497
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Phosphorus redistribution during the formation of buried CoSi"2 layers by ion beam synthesis
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 84 (1994), S. 143-147 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0168-583X(94)95743-6
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Formation of Porous Silicon Filter Structures with Different Properties on Small Areas (2000)
    Springer
    Journal of porous materials 7 (2000), S. 223-225 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; patterning ; photolythography dielectric filters ; reactive ion etching (RIE) ; microoptics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon (PS) layer systems have a broad range of possible applications. An advantage is the good control of the refractive index and the etch rate of the layers by the applied current density and the time respectively. For micro-optical devices you need patterned PS. For some optical devices it is not sufficient to have only one filter but it is necessary to form filters with different properties on a small area. We applied a method (M. Frank, U.B. Schallenberg, N. Kaiser, and W. Buß, in Conference on Miniaturized Systems with Microoptics and Micromechanics, edited by M.E. Moamedi, L.J. Hornbeck, and K.S.J. Pister (SPIE, San Jose, 1997), SPIE Proceedings Series 3008, p. 265) to PS which fits this goal by the following steps: fabrication of the desired reflectors below each other and partial removal of upper reflectors with reactive ion etching (RIE). The technological aspects of patterning PS after the fabrication are an important topic of this work. Problems are discussed in detail and solutions are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009651224071
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electrical Control of the Reflectance of Porous Silicon Layers (2000)
    Springer
    Journal of porous materials 7 (2000), S. 205-208 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; oxidation ; liquid crystal
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this paper we demonstrate the filling of porous silicon (PS) layers with liquid crystals (LC's) in order to control the reflectance electrically. The preparation of PS and the choice of the right group of LC's will be presented. Especially an oxidation of PS is necessary so that the methods and parameters of oxidation will also be discussed. As a first result the increasing and decreasing of the thickness oscillations in the reflectance as a function of the applied voltage can be observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009642922253
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...