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  • 1
    Electronic Resource
    Electronic Resource
    Growth-induced shallow acceptor defect and related luminescence effects in molecular beam epitaxial GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 741-754 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of a defect responsible for the "g'' bound exciton line at 1.5112 eV that is frequently detected in photoluminescence spectra of GaAs grown by molecular beam epitaxy (MBE). A direct correlation has been observed between this line and a transition at 1.4946 eV, which is shown to result from a conduction band-to-acceptor recombination involving a shallow, unidentified acceptorlike defect that is labeled "A.'' The activation energy of the defect is 24.8±0.2 meV, about 1.7 meV lower than that of CAs acceptor. Upon hydrogenation the defect is passivated more extensively than any known shallow acceptor species in GaAs. This result is analyzed in terms of a passivation model, from which it can be inferred that the A defect is not due to a simple substitutional Group II impurity on a Ga site. Incorporation of the A defect strongly affects the luminescence properties of the material. An almost complete quenching of the donor-bound exciton lines, profound changes in the line shape and relative intensity of the free exciton recombination, and appearance of a sharp transition of unknown origin at 1.5138 eV were observed with increasing defect concentration. Apparently "donorless'' low temperature exciton recombination spectra are reported for defect-rich p-type MBE GaAs layers with donor concentrations as high as 7×1014 cm−3 and compensation ratios of ∼0.3. The dependence of the defect incorporation on MBE growth parameters is discussed. The feasibility of MBE growth of high purity, nearly shallow defect-free p-type GaAs layers at marginally As-stabilized surface conditions over an about 1–5 μm/h range of deposition rates is demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346779
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  • 2
    Electronic Resource
    Electronic Resource
    High-purity epitaxial indium phosphide grown by the hydride technique (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1868-1870 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium phosphide layers with electron mobilities at liquid-nitrogen temperature of 91 000–125 000 cm2 /V s and carrier concentrations of 3–6×1014 cm−3 have been routinely grown by hydride vapor phase epitaxy. This 77 K mobility is significantly higher than the best previously reported for hydride vapor phase epitaxial InP. Analysis by variable temperature Hall effect, photothermal ionization spectroscopy, photoluminescence, and magnetophotoluminescence confirms the high purity of the samples. The influence of O2 on Si incorporation (injected over the In source) has also been studied. The injected oxygen did not significantly influence the silicon donor concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100483
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  • 3
    Electronic Resource
    Electronic Resource
    Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1905-1907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mixture of 500 ppm CCl4 in H2 has been used to grow heavily doped p-type GaAs by low-pressure metalorganic chemical vapor deposition with TMGa and AsH3 as the group III and V sources, respectively. Carbon acceptor concentrations between 1×1016 and 1×1019 cm−3 were obtained. In addition, abrupt carbon-doping profiles were achieved with no noticeable memory effects. Carrier concentration was studied as a function of CCl4 flow, V/III ratio, growth temperature, and growth rate using electrochemical capacitance-voltage profiling. Carbon incorporation was found to depend on CCl4 flow, V/III ratio, and growth temperature. Carbon incorporation had no dependence on the growth rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101237
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  • 4
    Electronic Resource
    Electronic Resource
    Salt-Water Movement in the Principal Artesian Aquifer of the Savannah Area, Georgia and South Carolina (1964)
    Oxford, UK : Blackwell Publishing Ltd
    Ground water 2 (1964), S. 0 
    Details
    ISSN: 1745-6584
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Geosciences
    Notes: The Savannah area obtains most of its water supply from the principal artesian aquifer. The aquifer consists of limestones of middle and late Eocene age. Unflushed salty water is present in the lower water-yielding zones of the aquifer in the eastern part of the area and sea water is entering the upper water-yielding zones in the northeastern part of the area. The salty water in the lower zones and the upper zones is moving slowly toward Savannah because a cone of depression created by pumping has reversed the natural hydraulic gradient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1745-6584.1964.tb01777.x
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  • 5
    Electronic Resource
    Electronic Resource
    Television — A New Tool for the Ground-Water Geologist (1963)
    Oxford, UK : Blackwell Publishing Ltd
    Ground water 1 (1963), S. 0 
    Details
    ISSN: 1745-6584
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Geosciences
    Notes: The television camera has become a tool of the ground-water geologist, enabling him to examine visually the inside of a well deep below the land surface. Using the camera, the rocks can be viewed in place. Of great importance to the ground-water studies in coastal Georgia, the camera enables the geologist to see the important water-bearing zones in a limestone aquifer, and to recognize cracks and solution cavities, the changes in geologic formations, and the irregularities in the well bore that indicate the relative hardness of the rocks. The engineer, well driller, and water developer can examine a well when “trouble shooting” to see whether the casing is broken, whether screens are eroded, or whether the well contains obstructions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1745-6584.1963.tb01926.x
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