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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1410-1414 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of GaAs thin films by a laser photodecomposition process is reported. Ga(CH3)3 and As(CH3)3 mixtures are photolyzed above (100) Si and GaAs substrates by a 193-nm argon fluoride excimer laser beam directed normal to the substrate surface. Gas-phase products diffuse to, and stick on the surface where further laser irradiation leads to the formation of polycrystalline GaAs, with grain sizes between ∼20 and 2000 A(ring). Deposited films contain ∼1–3 at. % carbon, as determined by Auger electron spectroscopy. Surface irradiation by the transmitted beam improves the optical constants of the film to values approaching bulk GaAs, but annealing is not sufficient to promote epitaxial growth at fluences as high as 70 mJ/cm2, for average substrate temperatures up to 400 °C. Laser irradiation of the GaAs substrates exposed to BCl3 or As(CH3)3 immediately prior to deposition removes the native oxide and carbon contamination.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1730-1735 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ultraviolet (UV) absorption cross sections from 185 to 320 nm have been measured for four group IIIb and two Vb alkyl compounds. These are trimethylaluminum (TMAl), trimethylgallium (TMGa), triethylgallium (TEGa), ethyldimethylindium (EDMIn), trimethylarsenic (TMAs), and tertiarybutylphosphine (TBP). In the case of ethyldimethylindium (EDMIn) and tertiarybutylphosphine (TBP), the UV absorption spectra have not been previously recorded. The UV absorption cross sections were measured at 193, 222, and 248 nm; wavelengths that are readily achieved with commercially available excimer lasers. The UV spectra of the group IIIb compounds show a weak long-wavelength absorption followed by a strong absorption, while those of the group Vb compounds show a sharp cutoff in the long-wavelength end of a strong absorption. TMGa, TEGa, and TMAs exhibit a decreasing absorption with increasing temperature. However, with an increase of temperature, the absorption of TMAl increases rapidly and the absorption extends towards longer wavelengths, reflecting dissociation of the dimer into monomer at higher temperatures. A simple molecular orbital model by Walsh is used to interpret the UV spectra of these metal alkyl compounds.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAsP/InP single-quantum well and multiquantum-well (MQW) structures have been successfully grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The quantum wells grown consist of 1.3- and 1.5-μm composition InGaAsP, with barriers of InP. Layer thicknesses vary from 18 to 1300 A(ring) for the various structures grown. Analysis of these structures by low-temperature photoluminescence reveals distinct, sharp luminescent peaks, with half-widths from 4.8 to 13 meV. Cross-sectional transmission electron microscopy (XTEM) and Auger spectroscopy of the quantum-well structures reveals extremely sharp interfaces and homogeneous composition, demonstrating the feasibility of LP-MOCVD for the growth of very thin epitaxial layers. This preliminary data indicates that the growth of MQW structures for the next generation of laser diodes (i.e., MQW-distributed-feedback lasers), with monolayer interfacial abruptness, is possible by LP-MOCVD.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 3481-3490 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Carbon disulfide (CS2) photolysis was investigated in the gas phase using an argon fluoride (ArF) laser at 193 nm. The coaxial time-of-flight (TOF) distributions of CS radicals produced in the photolysis have been measured. Photochemical fragments have been observed with translational energies below 3 kcal/mol. The vibrational distribution of the CS fragments was also probed by laser induced fluorescence (LIF), and these measurements confirm that significant amounts of CS radicals are produced in vibrational levels greater than v‘=6. From a computer simulation of the experimental LIF data, a vibrational distribution was also obtained. Vibrational levels up to v‘=12 were found to be populated in a bimodal distribution, which peaks at v‘=4, and extends to v‘=12. There was a significant amount of rotational excitation of nascent CS produced in high vibrational levels of the ground state. The disjoint translational energy and CS vibrational energy distributions can be used to obtain an estimate of the S(3P) to S(1D) ratio of 0.66.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 5925-5933 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The polarized absorption spectra of oriented films of phase-I and phase-II poly(di-n-hexylsilane), PDHS, have been determined in the visible/UV and in the near-edge regions of the C 1s and Si 1s x-ray ionization potentials. The phase-I absorption band at 360 nm is strongly polarized parallel to the direction of the Si chain, whereas the analog of this band in phase II (317 nm) is only weakly polarized in the same direction; this is consistent with partial trans→gauche isomerization of the Si chain in phase II and delocalization of the excitation in part onto disordered n-hexyl groups. Polarized absorption in the vicinity of the Si 1s ionization limit reveals strong polarization of the discrete and continuum transitions in both phase I and phase II, whereas the equivalent spectra taken in the vicinity of the C 1s limit show strong polarization in phase I but little or no polarization in phase II. The x-ray spectra are interpreted as showing that the Si chain and the n-hexyl groups of the polymer are ordered in phase I and are essentially perpendicular to one another, whereas in phase II the n-hexyl chains are disordered while the Si backbone remains relatively fixed in space. The Si 1s electron-yield spectra also display EXAFS interferences which have been transformed to yield Si–Si and Si–C distances in the polymer of 2.37±0.02 and 1.81±0.03 A(ring), respectively. The various discrete and continuum transitions are assigned according to an orbital model, and the visible/UV thermochromism earlier reported for PDHS is now observed in the Si 1s x-ray near-edge spectrum as well.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3337-3342 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using Fourier-transformed infrared spectroscopy, we show that pulsed ArF excimer laser irradiation of plasma-deposited silicon nitride films causes a large reduction in NH (∼100%) and SiH (∼50%) in the top ∼500 A(ring), and further show that this is responsible for the large suppression of the etch rate in buffered HF solution. Temperature rise calculations qualitatively predict the observed maximum falloff in etch rate and in SiH and NH concentration at the surface of the film. The observed reduction of the effect in thin films, which is due to the heat-sink effect of the underlying substrate, is also predicted. Both are strong indications that NH and SiH bonds are broken in a laser heating process. H2 has been detected as a product evolved during laser irradiation; however, most H2 remains trapped in the film.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1065-1067 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report preliminary studies of the growth of homoepitaxial GaAs by laser-assisted metalorganic molecular beam epitaxy, using triethylgallium (TEGa) and As4 sources and a 193 nm ArF excimer laser. Laser irradiation results in a high, selective-area growth rate at temperatures below 450 °C, where pyrolytic growth is very slow. The process is extremely efficient, with roughly unit probability for impinging TEGa molecules sticking and being dissociated by laser radiation to form GaAs. From the strong dependence on laser fluence, the growth enhancement process appears to be pyrolytic in nature (because of transient heating by the pulsed laser) and not photolytic. The cross section for photolysis must be at least ten times lower than the gas-phase value (9×10−18 cm2). The surface morphology of films grown at 400 °C is rough at threshold fluences (∼0.10 J/cm2), but becomes smooth at higher fluences (∼0.13 J/cm2). These regions with relatively smooth surfaces exhibit enhanced photoluminescence yields compared to areas receiving less intense laser radiation.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 966-968 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results on the effect of a 193 nm ArF excimer laser on molecular beam epitaxial growth of (Al)GaAs on GaAs substrates and GaAs on lattice-matched (Ca,Sr)F2/GaAs heterostructures. For growth on GaAs substrates, regions exposed to the laser show photoluminescence and excellent channeling as determined by Rutherford backscattering spectroscopy, whereas regions outside the laser show no photoluminescence. For growth on (Ca,Sr)F2 surfaces, laser irradiation inhibits the growth of GaAs for fluences above a critical value of 0.12 J/cm2 pulse because of laser-induced desorption of absorbed Ga atoms, which are relatively weakly bound to (Ca,Sr)F2, compared to GaAs surfaces.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 1869-1873 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 1148-1158 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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