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  • 1
    Electronic Resource
    Electronic Resource
    Capacitance–voltage and current–voltage characterization of AlxGa1−xAs–GaAs structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7091-7098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xAs–GaAs structures with thin (400–1000 A(ring)) Cr-doped or unintentionally doped AlxGa1−xAs layers (0.3≤x≤1) were grown on n+ GaAs substrate by molecular-beam epitaxy. The AlxGa1−xAs–GaAs interface and the insulating properties of thin AlxGa1−xAs layers at 300 K have been studied by capacitance–voltage and current–voltage measurements, respectively. An AlxGa1−xAs–GaAs interface state density in the lower 109 eV−1 cm−2 range was obtained. The insulating properties of thin AlxGa1−xAs layers were found to be controlled by AlxGa1−xAs–GaAs interface band offsets (ΔEo,ΔEv) and metal–AlxGa1−xAs barrier height ΦBn in accumulation and deep depletion, respectively, rather than by AlxGa1−xAs bulk properties such as specific bulk resistivity. Furthermore, required electrical properties of insulating layers employed in metal–insulator–semiconductor structures are discussed using a self-consistent heterostructure model based on Poisson's equation and current continuity equations. Finally, a fundamental equation for the formation of inversion channels has been derived. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360416
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  • 2
    Electronic Resource
    Electronic Resource
    On the optical properties of InAs/InP systems: The role of two-dimensional structures and three-dimensional islands (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1015-1017 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the effects of the interface morphology on the electronic properties of InAs/In systems using in-air atomic force microscopy and low temperature photoluminescence. Atomic force microscopy results show that the distribution of InAs strained film into three-dimensional islands and the two-dimensional wetting layer—typical of the Stranski–Krastanov growth mode—is strongly affected by the characteristics of the substrate and by the morphology of the InP buffer layer. The differences in the optical data are correlated to the different interface characteristics observed by atomic force microscopy. We discuss the origin of emission peaks taking into account the diffusion process of adsorbed atoms on the different types of surface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120951
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  • 3
    Electronic Resource
    Electronic Resource
    Z-scan measurements with Fourier analysis in ion-doped solids (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2094-2096 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the measurement of nonlinear refraction in ion-doped solids with a method that combines the single-beam Z-scan technique and a Fourier analysis of the transmittance time evolution. The laser beam is modulated at a frequency f and the Fourier components at f and 2f are shown to be related, respectively, to linear and nonlinear refractions. Their ratio is used to eliminate spurious linear effects as a way of increasing the sensitivity of the measurement. With this method we are able to measure nonlinear phase changes of a few tens of mrad, corresponding to wave front distortions smaller than λ/105. Moreover, the technique can discriminate nonlinear processes with different relaxation times. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119352
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  • 4
    Electronic Resource
    Electronic Resource
    Light scattering and atomic force microscopy study of InAs island formation on InP (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1165-1171 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some aspects of the morphology of InAs island formation on InP have been studied by atomic force microscopy, photoluminescence, photoluminescence excitation spectroscopy, and Raman scattering. The InAs layer is grown by chemical beam epitaxy on top of InP surfaces with sawtooth-like channels. The deposition of a thin InAs layer results in quantum dots strongly aligned along the InP channels. Subsequent annealing in an arsenic atmosphere produces growth and loss of coherency of the islands. Atomic force microscopy shows the changes in size and alignment of the islands. Optical measurements serve to give quantitative estimates of the strain distribution among the top of the InP buffer layer, the wetting layer and the islands for the differently treated samples. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371994
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  • 5
    Electronic Resource
    Electronic Resource
    Hole confinement effects on multiple Si δ doping in GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2895-2896 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The observation of quantum-confined optical transitions in multiple δ doping in GaAs, grown by molecular beam epitaxy, is reported. Doping efficiency and carrier confinement are investigated by Hall and photoluminescence measurements. Hall measurement results for multiple δ-doped samples show a dramatic enhancement of carrier concentrations compared to the uniform doping case. From photoluminescence spectra we observed that the cutoff energy is significantly affected by the spacing between the dopant sheets. The strong localization of confined photoexcited holes in the spacing layers of these structures plays a fundamental role in the interpretation of the optical data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106811
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  • 6
    Electronic Resource
    Electronic Resource
    Surface cleaning of GaAs by in situ chemical beam etching (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3368-3370 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical beam etching using AsCl3 has been shown to provide accurate etch rate control at the atomic level, mask feature transfer at submicron scale, and a clean damage-free surface for regrowth. The etching process can be maintained in a two-dimensional fashion, if the etching conditions are designed to enable efficient cation diffusion that smooths the microroughness. In this work, we show from etching the heavily Be-doped GaAs surface that the in situ etching prior to growth is potentially a useful method for etch cleaning the surface. However, the effectiveness of this method depends on the ability to form volatile species with the contaminant in competition with the formation of group III chloride. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112394
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of dynamic optical nonlinearities with pulse trains (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1531-1533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a simple extension of the Z-scan technique where pulse trains characteristic of a Q-switched and mode-locked Nd:YAG laser are employed to investigate the dynamics of third-order optical nonlinearities. The method allows discriminating between fast and accumulative nonlinearities, and was applied to the investigation of liquid samples, namely chloroform, benzene, and a solution of Disperse Red 1 dye. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123606
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  • 8
    Electronic Resource
    Electronic Resource
    Hypotension following combined spinal-epidural anaesthesia for Caesarean section (2003)
    Oxford, UK : Blackwell Science Ltd
    Anaesthesia 58 (2003), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary Eighty-seven pregnant mothers undergoing elective Caesarean section were randomly allocated either to the full left lateral position (n = 45) or to the supine position with 12° left lateral tilt (n = 42) after a combined spinal–epidural (CSE) in the sitting position and an initial 2 min in the full right lateral position. Fewer mothers were hypotensive while in the study position [29 (64%) in lateral group vs. 38 (90%) in the tilted supine group; p = 0.03]. Mothers in the lateral group tended to become hypotensive after turning them back to the tilted supine position immediately before surgery; hence the number of mothers who were hypotensive from the insertion of the CSE until delivery were similar [36 (80%) vs. 38 (90%)]. Mothers in the lateral group needed a lower dose of ephedrine to treat their hypotension while in their study position {median (interquartile range [range]) 6 (0–12 [0–36]) mg vs. 12 (6–18 [0–36]) mg, respectively; p = 0.04} but ephedrine requirements were similar overall {12 (6–12 [0–36]) mg vs. 12 (6–18 [0–36]) mg}, respectively. The full left lateral position reduces the incidence of early hypotension compared with the tilted supine position with tilt, and makes it easier to treat.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2044.2003.03090.x
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  • 9
    Electronic Resource
    Electronic Resource
    Huntington’s chorea: use of rocuronium (2001)
    Oxford, UK : Blackwell Science Ltd
    Anaesthesia 56 (2001), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2044.2001.2279-29.x
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  • 10
    Electronic Resource
    Electronic Resource
    Occupational contact urticaria from walnut associated with hand eczema (2005)
    Oxford, UK; Malden, USA : Munksgaard International Publishers
    Contact dermatitis 53 (2005), S. 0 
    Details
    ISSN: 1600-0536
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.0105-1873.2005.0407f.x
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