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  • 1
    Electronic Resource
    Electronic Resource
    Beryllium ion implantation in GaAsSb epilayers on InP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 699-709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium ion implantation was used to form high acceptor concentrations in GaAs1−xSbx (0.47≤x≤0.49) epilayers on semi-insulating InP substrates. Two implant doses were tested: Q0=5×1014 cm−2 and Q0=1×1015 cm−2 at an implant energy of E=50 keV. Electrochemical profiling and secondary-ion-mass spectrometry (SIMS) results confirm acceptor concentrations of NA≥1×1019 cm−3 and NA≥2×1019 cm−3 within 1000 A(ring) of the GaAs1−xSbx surface for the lower and higher implant dose, respectively. These results provide a p+ surface layer for low-resistance ohmic contact to GaAsSb-based devices. Optical microscopy and SIMS demonstrate rapid thermal anneal (RTA) temperature limits of T=650 °C for Q0=5×1014 cm−2 and T=600 °C for Q0=1 ×1015 cm−2. The temperature limitation is imposed by destabilization of the GaAs1−xSbx surface through Ga sputtering during implantation, and Ga and As outdiffusion during RTA. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360814
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of the direct band gap energy and donor–acceptor transition energies in Be-doped GaAsSb lattice matched to InP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2442-2444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The direct band energy (Eg) and donor–acceptor (D,A) transition energies are mapped as a function of temperature for Be-doped GaAsSb lattice matched to InP. Photoluminescence (PL) measurements over the temperature range 2 K≤T≤300 K yield two emission peaks, one of lower intensity and one of higher intensity. The lower intensity peak is believed to be Be related, while the higher intensity peak is from residual impurities. The emission energies of both PL peaks increase linearly with respect to the logarithm of excitation intensity, indicating the peaks are (D,A) transitions. Measurement of Eg was achieved using optical absorption spectroscopy over the range 14 K≤T≤300 K. A least squares fit of the absorption data using the Varshni equation produces a closed form expression for Eg(T) with coefficients α=13.5×10−4 eV/K, and β=135 K. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112701
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of the donor-bound light-hole free exciton in AlGaAs-GaAs quantum wells (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 439-442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The neutral donor-bound light-hole free exciton has been observed in AlxGa1−xAs-GaAs multi-quantum wells (MQWs). The transition was observed using selective excitation photoluminescence spectroscopy on two nominally 350-A(ring)-wide AlxGa1−xAs-GaAs MQW structures in the energy region between the light-hole and heavy-hole free-exciton transitions, where no other intrinsic transitions exist. The neutral donor-bound heavy-hole free-exciton transition was also observed in both MQW structures. A third 150-A(ring)-wide MQW structure which showed no evidence of a donor-bound heavy-hole free exciton also showed no evidence of a donor-bound light-hole free exciton.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345221
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