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  • 1
    Electronic Resource
    Electronic Resource
    Magnitude of the piezoelectric field in (111)B InyGa1−yAs strained-layer quantum wells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4681-4684 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between the magnitude of the piezoelectric field and the degree of lattice constant mismatch is investigated via low-temperature photoluminescence measurements of the quantum-confined Stark effect for a series of (111)B Al0.15Ga0.85As-InyGa1−yAs pseudomorphic quantum well heterostructures. The experimental strain-induced electric field values agree well with theoretical calculations for indium mole fractions in the range 0.037≤y≤0.09. In addition, an anomalous saturation of the photoluminescence transition energy is observed at values of applied voltage greater than that required to nullify the piezoelectric field, despite the indication from separate electroreflectance measurements that the net electric field within the quantum well reverses polarity under similar electrical biasing conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354359
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  • 2
    Electronic Resource
    Electronic Resource
    Magnitude, origin, and evolution of piezoelectric optical nonlinearities in strained [111]B InGaAs/GaAs quantum wells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7767-7774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnitudes of excitonic nonlinearities were compared at 12 K in InGaAs/GaAs multiple quantum well structures with growth directions oriented along the [100] and [111] crystal axes by measuring both the steady-state and time-resolved differential transmission spectra. As expected, the spectra for the [100] sample are indicative of excitonic bleaching at all times and for all excitation levels, and a carrier recombination time of 0.8 ns and a nonlinear cross section (change in absorption coefficient per carrier pair) of ∼8×10−14 cm2 are extracted for the [100] sample. By comparison, for low excitation levels, the spectra for the [111] sample are consistent with a blueshift of the exciton, indicating a screening of the strain-induced piezoelectric field. At higher excitation levels, the spectra are dominated by excitonic bleaching. Under identical 1 ps pulsed excitation conditions, the magnitudes of the changes in the absorption coefficient caused by screening in the [111] sample are comparable to those measured for bleaching in the [100] sample. By contrast, the steady-state changes in the absorption coefficient caused by screening in the [111] sample are an order of magnitude larger than the changes caused by bleaching in the [100] sample. It was demonstrated that the larger steady-state response for the [111] sample is caused by carrier accumulation over the longer (density-dependent) lifetime for that sample and that it is not the result of a larger nonlinear cross section. The slow, nonexponential, density-dependent recombination rates measured for the [111] sample are consistent with carrier escape and drift to screen the entire multiple quantum well structure and are not consistent with screening within the individual quantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353976
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  • 3
    Electronic Resource
    Electronic Resource
    Experimental sensitivity analysis of pseudomorphic InGaAs/AlAs resonant-tunneling diodes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6305-6317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Through the use of a novel vertically integrated resonant-tunneling diode (RTD) heterostructure we have established experimentally the relationship between intentional variations in the structural parameters of the pseudomorphic In0.53Ga0.47As/AlAs resonant tunneling diode (i.e., barrier thickness, quantum-well thickness, quantum-well composition, and doping density) and the measured current–voltage characteristics of the device. Based upon the results of these experiments, we have determined that a 1 monolayer increase in AlAs barrier width, InGaAs quantum-well width, or InAs subwell width results in a peak current reduction of 56%±7%, 19%±2%, and 18%±3%, respectively. Further, a 1% decrease in indium mole fraction of the InGaAs quantum well has been found to increase the peak current by 10%±1%. Sensitivity parameters have been tabulated for both the peak current and the peak voltage of the RTD. Through the use of these parameters, the maximum allowed fluctuation in the RTDs structural parameters has been estimated for a given tolerance in the RTDs electrical characteristics. Further, these data can also be used to evaluate the feasibility of in situ epitaxial growth control of resonant tunneling devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360511
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  • 4
    Electronic Resource
    Electronic Resource
    Screening effects in (111)B AlGaAs-InGaAs single quantum well heterostructures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2637-2639 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reduction in luminescence decay time and a shift toward higher optical transition energy is observed in response to an increase in photogenerated carrier density for a p-i-n (111)B Al0.15Ga0.85As-In0.055Ga0.945As strained-layer single quantum well heterostructure. These effects, which are attributed to free-carrier screening of the strain-induced electric field, are expected to be useful for designing novel optoelectronic devices that exploit the unique electro-optic properties of (111) strained quantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106879
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  • 5
    Electronic Resource
    Electronic Resource
    Real-time thickness control of resonant-tunneling diode growth based on reflection mass spectrometry (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2555-2557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We used reflection mass spectrometry (REMS) to control the molecular beam epitaxial growth of resonant-tunneling diode (RTD) structures. The REMS-based thickness value controlled the effusion cell shutter actuation, and compensated in real time for flux transients and short-term flux drift. Use of REMS control during deposition of AlAs, InAs, and InGaAs layers resulted in improved symmetry and reproducibility of the RTD I-V characteristics, compared with time-based, dead-reckoning growth. REMS-based control for flux compensation during growth of GaAs/AlGaAs multi-quantum-well structures is also reported. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113165
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  • 6
    Electronic Resource
    Electronic Resource
    Room-temperature operation of a tunneling hot-electron transfer amplifier (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1138-1140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a tunneling hot-electron transfer amplifier that exhibits both dc and rf current gain at room temperature. The measured peak common-emitter current gain of the transistor approaches 7 while the dc differential gain is close to 10. S-parameter measurements, performed at a current density of 1.8×104 A cm−2, yield a current gain cutoff frequency of 6 GHz and a maximum frequency of oscillation of 12.5 GHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110831
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  • 7
    Electronic Resource
    Electronic Resource
    Optically switched resonant tunneling diodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1104-1106 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room-temperature photoinduced switching of an InGaAs/AlAs resonant-tunneling diode is demonstrated. When illuminated at an irradiance of greater than 20 W cm−2 using 1.3 μm radiation, the resonant-tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of 600 mV. The switching characteristics are reversible and, in the absence of light, the detector returns to its original high conductance operating state. Small-signal optical measurements performed with the device biased prior to resonance demonstrate a 3 dB bandwidth of ∼1.5 GHz. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113826
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  • 8
    Electronic Resource
    Electronic Resource
    Demonstration of scaled (≥0.12 μm2) Pb(Zr,Ti)O3 capacitors on W plugs with Al interconnect (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4004-4006 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The measured switched polarization properties of integrated Pb(Zr,Ti)O3 (PZT) capacitors arrays have been found to show a small dependence on individual capacitor size in the range from 0.17 and 100 μm2. These thin (90 nm) PZT capacitors have low voltage switching properties with polarization saturation of 〈1.8 V with switched polarization for the smallest capacitors (0.17 μm2) still larger than 25 μC/cm2. The capacitor stack consisted of TiAlN hardmask/Ir/IrOx/PZT/Ir/TiAlN on either SiO2 dielectric or W plugs. The capacitor was patterned using 248 nm lithography and etched using only one mask. For wafers without W plugs, the Ir bottom electrode was not etched. For wafers with W plugs, the entire capacitor stack was etched and electrical connection to the bottom electrode was through the W plugs. The capacitors were integrated using SiO2 dielectrics and one level of Al metallization. These data suggest that high-density, ferroelectric capacitor-based memories may be feasible. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1423789
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