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  • 1
    Electronic Resource
    Electronic Resource
    The effect of coimplantation on the electrical activity of implanted carbon in GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7118-7123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of radiation damage and stoichiometry on the electrical activity of carbon implanted in GaAs are studied. Damage due to implantation of an ion heavier than C increases the number of C atoms which substitute for As (CAs). Creation of an amorphous layer by implantation and the subsequent solid phase epitaxy during annealing further enhances the concentration of CAs. However, the free carrier concentration does not increase linearly with increasing concentration of CAs due to compensating defects. Activation of implanted C is maximized by maintaining the stoichiometry of the substrate which reduces the number of compensating defects in the crystal. Under optimum conditions for carbon implanted at a dose of 5×1014 cm−2, the carbon acceptor activity can be increased from 2% to 65% of the total implanted carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355027
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  • 2
    Electronic Resource
    Electronic Resource
    Amphoteric behavior and precipitation of Ge dopants in InP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4907-4915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have directly correlated the electrical behavior, the impurity lattice site location, ion damage, and the local bonding environments of Ge-dopant ions implanted into InP. We have found that after rapid thermal annealing the free electron concentration in the samples implanted at room temperature (RT) are always higher than those implanted at liquid nitrogen temperature (LNT). Although the macroscopic structure seems to be insensitive to the implantation temperature, significantly more local disorder is created in the LNT implanted amorphous layers. Moreover, the amphoteric bonding structure of the Ge atoms is found to be well established already in the as-implanted amorphous InP. After high temperature annealing ((approximately-greater-than)800 °C), the Ge atoms rearrange locally with more of the Ge substituting the In site than the P site resulting in n-type conductivity. The solid solubility of Ge in the InP is measured to be ∼1.4–1.6×1020/cm3 while the free electron concentration is estimated to saturate at ∼3.4×1019/cm3. The relatively low electron concentration can be explained by Ge precipitation and the compensation of GeIn donors by GeP acceptors in the RT implanted case. The further reduction in electron concentration in the LNT implanted samples is believed to be related to the high residual damage found in these samples. The high solubility of Ge in InP can be attributed to the availability of two possible sublattice sites for the dopant and the compensation of the local strains due to the amphoteric substitution of the Ge. The concentration ratio of the GeIn to GeP determined in the heavily implanted material has been used to estimate the difference in the formation energy of Ge substituting those two different sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363533
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  • 3
    Electronic Resource
    Electronic Resource
    Direct evidence of carbon precipitates in GaAs and InP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1145-1147 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of carbon-doped GaAs and InP show two peaks which are characteristic of C clusters with sp2 bonding. The peaks are seen in C-implanted GaAs and InP following either rapid thermal annealing or furnace annealing. The peaks are also seen in heavily doped epilayers following furnace annealing. Various mechanisms for C precipitation are discussed. Experimental evidence suggests that the loss of the group V component at the surface during annealing may play a role in the precipitation of C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112123
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  • 4
    Electronic Resource
    Electronic Resource
    Substitutionality of Ge atoms in ion implanted AlSb (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2406-2408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The substitution of Ge atoms into ion implanted AlSb is investigated by extended x-ray absorption fine structure spectroscopy. Our results reveal that in the as-implanted material, the implanted Ge atoms are equally distributed between two specific sites, one surrounded by Al atoms and the other surrounded by Sb atoms. After annealing at 750 °C for 5 s, the coordination number of the Ge atoms increases from ∼3 to ∼4 indicating solid phase regrowth of the implantation induced amorphous surface layer. Moreover, in the annealed AlSb, the substitution of Ge atoms into the Al sublattice dominates with an estimated GeAl]:[GeSb]∼0.8:0.2. These results suggest that Ge atoms act preferentially as donor species in AlSb. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113955
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  • 5
    Electronic Resource
    Electronic Resource
    Amphoteric substitutionality and lattice distortion of Ge in InP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1543-1545 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the electrical and structural properties of InP implanted with Ge ions (2×1015/cm2). The implantation was performed at both room temperature (RT) and liquid nitrogen temperature (LNT). After annealing at 850 °C for 5 s, both sets of samples exhibited n-type conductivity. The n-type activation efficiency in the RT implanted sample was about a factor of 2 higher than that in the LNT sample (15% and 8%, respectively). Extended x-ray absorption fine structure spectroscopy (EXAFS) shows direct evidence of the amphoteric substitutionality of the Ge atoms in InP for both samples. The ratios of Ge on In sites to Ge on P sites, derived from the EXAFS results, are consistent with the electrical behavior of the samples. The EXAFS results also reveal that the Ge—In and Ge—P bond lengths in the RT sample are very similar to their theoretical values, but are very different from the original In—P bond length. A relaxation in the Ge—In bond is observed in the LNT sample, resulting in a Ge—In bond length very similar to the original In—P bond length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111886
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  • 6
    Electronic Resource
    Electronic Resource
    Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2383-2385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have coimplanted carbon and a series of elements (B, N, Al, P, Ar, Ga, As, and Kr) in GaAs to study the effect of both implant damage and stoichiometry on activation. Electrical activity of C was found to increase due to the additional damage caused by coimplantation of a heavy element regardless of the chemical nature of the coimplant. Maintaining stoichiometry by coimplanting a group III element further increased activation in substrates heavily damaged during implantation. Activation of 65±3%, corresponding to a sheet free-carrier concentration of 3.5×1014 cm−2, was achieved by coimplanting Ga and annealing at 950 °C for 10 s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107004
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  • 7
    Electronic Resource
    Electronic Resource
    Air Pollution by Formation of Sulfuric Acid in Fogs (1960)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 52 (1960), S. 861-863 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50610a031
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  • 8
    Electronic Resource
    Electronic Resource
    Unsteady state absorption of carbon dioxide by dilute sodium hydroxide solutions (1963)
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 9 (1963), S. 760-765 
    Details
    ISSN: 0001-1541
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Rates of carbon dioxide absorption by 0.01, 0.05, and 0.1 molar sodium hydroxide solutions were measured at 25°C. for exposure times from 1.4 to 21.6 milliseconds with a laminar-jet technique. Absorption rates were calculated with a model based on one-dimensional diffusion occurring simultaneously with two consecutive irreversible chemical reactions. The resulting partial differential equations were solved with an IBM-709 computer. The calculated absorption rates agreed within 5% of the experimental values.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/aic.690090611
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