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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5163-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering in the CuPt structure is known to significantly reduce the band gap of Ga0.52In0.48P as well as induce a number of unusual details in its optical properties, including long, excitation-intensity-dependent lifetimes and an excitation-intensity-dependent emission energy. We report photoluminescence (PL), photoluminescence excitation (PLE), and resonant Raman measurements performed on ordered and disordered Ga0.52In0.48P. The dominant high energy emission process at low temperature in disordered Ga0.52In0.48P is established to be excitonic, but the exciton trapping energy is not unique. PLE from ordered Ga0.52In0.48P shows significant tailing of electronic states into the band gap and a "band edge'' which depends on detection energy. The dominant radiative process in ordered Ga0.52In0.48P is not excitonic. A large increase in the Stokes shift between the absorption edge (band gap) and PL emission peak occurs when the material orders. Hence, low temperature PL is determined to be a particularly poor measure of band gap. Resonant Raman scattering is used to study optical phonons and their coupling to electronic states. We find that the resonance enhancement at the band edge occurs via localized excitons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353792
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  • 2
    Electronic Resource
    Electronic Resource
    Structural and vibrational properties of (InAs)m(GaAs)n strained superlattices grown by molecular beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 786-792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and vibrational properties of superlattices composed of many periods of highly mismatched InAs and GaAs layers have been studied by means of x-ray diffraction and Raman scattering as a function of the sample geometry. X-ray diffraction measures the average lattice mismatch between the superlattice and the substrate. The long-range order influences the propagative acoustic phonons whereas strain and confinement effects compete in determining the optic vibration frequencies of the InAs layers. The linewidth of the main superlattice peak in the diffraction patterns and the scattering intensities of the acoustic phonons are related to the actual shape of the interfaces. We find that the stability of the structures depends on the total number of periods, in agreement with the predictions of equilibrium elasticity theory. However, the competition between the different relaxation processes is governed by the individual layer thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347365
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  • 3
    Electronic Resource
    Electronic Resource
    Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 615-617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modal gain of an InAs/GaAs self-organized quantum dot laser is determined from a measurement of the normal incidence, interband photocurrent. The maximum modal gain of the ground state transition is shown to have a value of (7±3) cm−1, considerably smaller than typical values for comparable quantum well lasers. The photocurrent technique is demonstrated to be a convenient and simple method for determining the spectral form of the gain and for comparing the modal gain of different devices. The consequences of the small modal gain for the laser characteristics are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371908
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6374-6378 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a structural and optical spectroscopic investigation of multiple layer InAs/GaAs self-assembled quantum dots, studied as a function of the GaAs thickness between the quantum dot layers. With decreasing GaAs thickness the positions of dots in different layers exhibit a transition from no correlation to full correlation. Optically the dots in uncorrelated and fully correlated structures are found to exhibit very distinct and different properties. With increasing laser power the photoluminescence of the correlated structure exhibits a high energy, asymmetrical broadening, an effect absent in the uncorrelated structure. In photoluminescence excitation multiple-LO-phonon carrier relaxation features are observed in the spectra of the uncorrelated structure but not in the spectra of the correlated structure. These differences are explained in terms of nonresonant carrier tunneling between the dots in the correlated dot structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418003
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  • 5
    Electronic Resource
    Electronic Resource
    Solid-source molecular beam epitaxy growth of GaInP and GaInP-containing quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2029-2034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and characterization of high quality epitaxial layers of GaInP and GaInP-containing quantum wells grown by solid-source molecular beam epitaxy (MBE) is reported. Bulk GaInP shows photoluminescence linewidths as small as 6.7 meV and double-crystal x-ray diffraction linewidths as narrow as 12.5 arcsec. Evidence for the presence of long-range ordering in MBE-grown GaInP is discussed. GaAs-GaInP quantum wells show good structural and optical quality. A comparison of the measured transition energies with the predictions of a simple, finite depth square well model suggests a very small value for the conduction band offset in this system. GaInP-(Al0.37Ga0.64)0.51In0.49P quantum wells show good optical properties with emission at energies as high as 2.15 eV (≡6000 A(ring) at 300 K) at 4.2 K for a 12 A(ring) well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356304
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  • 6
    Electronic Resource
    Electronic Resource
    Electric-field-dependent photoconductivity in GaInAs-InP quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 752-754 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the effects of an electric field on the excitonic, band-to-band photoconductivity spectra of a Ga0.47In0.53As-InP quantum well structure. In a sample with five wells of widths 10–110 A(ring) we show that for carrier motion normal to the quantum well layers a photoconductivity signal is only observed from those wells which are in a region of nonzero electric field. The spectral line shapes of the transitions in the narrowest two wells show strong variations with field, which we attribute to exciton dissociation at high field, and possibly exciton screening by free carriers trapped in the wells at low fields. The results are compared with photoconductivity spectra of the same structure, but for carrier motion in the plane of the layers. The latter geometry is found to reflect more accurately the sample absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99822
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  • 7
    Electronic Resource
    Electronic Resource
    Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 213-215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compositional dependence of the electronic band structure of (AlxGa1−x)0.52In0.48P lattice matched to GaAs is reported. Epitaxial layers, grown by solid-source molecular-beam epitaxy, with excellent structural and optical quality are obtained over the whole compositional range. Optical spectroscopic techniques are used to study the electronic band structure as a function of composition. The low-temperature, direct excitonic band gap is found to be given by Eg(x)=1.979+0.704x eV and the lowest band gap becomes indirect for xc=0.50±0.02. The low-temperature excitonic direct band gap of Al0.52In0.48P is measured to be 2.680 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112676
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  • 8
    Electronic Resource
    Electronic Resource
    Band gap of "completely disordered'' Ga0.52In0.48P (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3185-3187 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phenomenon of ordering in Ga0.52In0.48P is well known to reduce the optical band gap; the amount of band gap reduction is often used to measure the degree of ordering. For such measurements to be meaningful, the band gap of the random ("completely disordered'') binary alloy must be known. Values of this fundamental material parameter appearing in the literature vary by up to 40 meV, while the largest band gap reduction reported to date is only about 120 meV, i.e., within a factor of 3 of the uncertainty in one endpoint. We report here a low temperature band gap of 2.010±0.007 eV for material lattice matched to GaAs as deduced from a broad spectrum of samples believed for different reasons to contain minimal ordering. The corresponding value at 295 K is 1.910±0.008 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113717
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  • 9
    Electronic Resource
    Electronic Resource
    GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 619-621 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (1.8 K) photoluminescence spectra of a Ga0.52In0.48P–(Al0.58Ga0.42)0.52In0.48P multiple quantum well have been measured as a function of hydrostatic pressure from 0 to 5.0 GPa. The extrapolation to zero pressure of the energy of the indirect k-and-real-space barrier X to well Γ transition allows the direct determination of the valence band offset for this heterojunction system. A value of ΔEv=(0.35±0.05)ΔEg is found, in good agreement with values previously determined from the theoretical modeling of quantum well transition energies. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114032
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  • 10
    Electronic Resource
    Electronic Resource
    Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111)B GaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 752-754 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of internal field distributions in strained InGaAs/GaAs multiple quantum wells in p-i-n structures grown on (111)B-oriented GaAs. Room temperature photocurrent spectroscopy shows clear blueshifting of the e1-hh1 transition as the well fields are reduced by external bias. The relative length of total well to total barrier material is shown to be an important factor in determining the well and barrier fields. We demonstrate a photocurrent contrast ratio of 4.5:1 for only 3 V applied bias across a 25 quantum well In0.13Ga0.87As p-i-n diode and discuss the implication of our results to the design of high performance electro-optic modulators and self electro-optic effect devices in this material system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109925
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