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  • 1
    Electronic Resource
    Electronic Resource
    Cadmium in Sea-water (1954)
    [s.l.] : Nature Publishing Group
    Nature 174 (1954), S. 42-42 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] In the present investigation, cadmium was extracted from 1-litre samples of sea-water from the Irish Sea by means of a chloroform solution of dithizone in the presence of cyanide at pS. 8-8. The cadmium in the extracts was determined spectro-photometrically by a modification of Saltzman's5 ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/174042a0
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  • 2
    Electronic Resource
    Electronic Resource
    Interaction between iodine and CdTe in closed tube diffusions (1994)
    Springer
    Journal of materials science 5 (1994), S. 352-355 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The compatibility of iodine and CdTe is discussed and methods by which CdTe can be doped with iodine from the vapour phase using closed tube diffusion techniques are described. At elevated temperatures ( ⩾ 100
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00215572
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of CdTe, Cd0.96Zn0.04 and Zn-diffused CdTe by defect etching (1998)
    Springer
    Journal of materials science 9 (1998), S. 397-401 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The crystal quality of CdTe, Cd0.96Zn0.04Te and Zn-diffused CdTe slices containing 1×1022 cm-3 atoms of zinc at the surface of the slice was investigated by the technique of defect etching. In this investigation, the chemical etch. Inoue EAg-1 reagent, gave satisfactory results, with useful comparative values of the etch pit density obtained in these materials. The main result that was obtained was that the etch pit density in Zn-diffused CdTe was more than 10 times greater than in undiffused CdTe and that after the diffused layer had been removed the value was virtually the same as in undiffused CdTe. © 1998 Kluwer Academic Publishers
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008996428822
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  • 4
    Electronic Resource
    Electronic Resource
    Thin alloy zone crystallisation (1967)
    Springer
    Journal of materials science 2 (1967), S. 46-62 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The basic principles of a family of crystal-growing techniques in which crystallisation of a substance is achieved via diffusion through a thin alloy zone (TAZ) from a third phase (solid, liquid, or vapour) are described. Crystallisation is achieved by the application of a gradient of a thermodynamic potential across the zone and various methods of establishing such a gradient are considered. A theory predicting the velocity of a TAZ along a solid charge, published previously (D. T. J. Hurle, J. B. Mullin, and E. R. Pike, Phil. Mag. 9 (1964) 423), is extended to include the case where one of the solid phases is metastable. Expressions for the gradient of constitutional supercooling in the zone are derived for conventional and thin alloy zone crystallisation (TAZC) processes. It is shown that the important advantage in the use of a TAZ is the dramatic reduction in the supercooling at a given velocity compared to conventional processes. A rationalisation of various published techniques of crystal growth within the concepts of TAZC is presented and some existing and potential applications of TAZC processes are reviewed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00550052
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  • 5
    Electronic Resource
    Electronic Resource
    An investigation of the preparation and properties of some IIIa-Vb compounds (1969)
    Springer
    Journal of materials science 4 (1969), S. 962-973 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Previous work bearing on the techniques of preparation of the IIIa-Vb compounds is reviewed and the preparative problems systematically analysed. This study has resulted in the development of a simple low temperature method for preparing these compounds from their component elements with the minimum of contamination. It has been found that these very high melting point compounds can be sublimed and that sublimation techniques offer a convenient route for their purification and fabrication in thin film form. Evidence that some of the IIIa-Vb compounds are semiconductors has been obtained from studies of the optical properties of thin films of PrAs, NdAs, SmAs, GdAs, DyAs, TmAs, YbAs, PrSb, SmSb, YbSb and SmP; their respective optical energy gaps were determined as ∼1, 1.04, 1.03, 0.63, 1, 1.18, 1.02, 0.66, 0.59, 1, and 1.09 eV respectively. A comparison is made between these measured values and those predicted by N. Sclar [1].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00555311
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  • 6
    Electronic Resource
    Electronic Resource
    Use of anodic oxidation as a sectioning technique for diffusion measurements in cadmium telluride (1992)
    Springer
    Journal of materials science 3 (1992), S. 211-217 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A radiotracer sectioning technique that can be used successfully for measuring concentration profiles in diffused slices of single-crystal CdTe using anodic oxidation is described. The technique is useful when the penetration of diffusant is 〈5 μm which, if a good resolution is required, involves removing sections as thin as 0.1 μm. Investigations have shown that the best results are obtained using constant-current techniques, in which the voltage across the oxide layer is directly proportional to the thickness of the layer. This implies that the current passing through the layer is space-charge limited. In addition, mesa and non-mesa sectioning geometries are compared, and it is shown that the former sectioning geometry gives the more accurate profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00703028
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  • 7
    Electronic Resource
    Electronic Resource
    Morphological effects and the diffusion of iodine in CdTe (1995)
    Springer
    Journal of materials science 6 (1995), S. 397-403 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The morphology of undiffused and iodine-diffused CdTe slices and its effect on iodine concentration profiles is discussed. Such CdTe slices were analysed using defect etching, scanning electron microscopy (SEM), infrared microscopy and secondary ion mass spectrometry (SIMS). The results suggest that during diffusion a layer of an iodine compound forms in the surface region of the CdTe while, over a limited range further into the material, clusters of either this or a similar compound form at defect sites causing a high degree of crystal distortion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00144641
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  • 8
    Electronic Resource
    Electronic Resource
    Diffusion of mercury into for HgxCd(1−x)Te 0≤x≤0.03 (1997)
    Springer
    Journal of materials science 8 (1997), S. 333-336 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Experiments carried out to fabricate HgxCd(1-x)Te by diffusing mercury into CdTe slices from the vapour, resulted in obtaining slices with a maximum value of x=0.004. Measurements on the diffusion of mercury into such slices, where 0≤x≤0.03, under saturated vapour pressure conditions, resulted in two component profiles, each profile giving two values of D. These results were similar to ones obtained earlier, indicating that the diffusion was rate-limiting. In addition, the diffusivities were found to be independent of x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018595508268
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  • 9
    Electronic Resource
    Electronic Resource
    A systematic study of zone refining of single crystal indium antimonide (1966)
    Springer
    Journal of materials science 1 (1966), S. 14-28 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The experimental conditions have been determined whereby it is possible, in a closed system, to distil off volatile impurities from an ingot of InSb, and subsequently pass at least 10 to 15 zones through the ingot, whilst constantly maintaining a single crystal structure of a chosen crystallographic orientation. It has been found that preservation of singularity and control of dislocation density can be achieved by selection of: seed orientation and polarity; provision of a containing boat which is not wetted by InSb; careful purification of gas ambient; and the establishment of the correct conditions of temperature gradient at the crystal growing interface. A minimum concentration of ∼3×1013 extrinsic electrons/cm3 was found in uniform specimens substantially uncompensated by volatile impurities. The work provides good evidence that this carrier concentration is not due to Te. The maximum electron mobility at 77° K that could be reproducibly obtained in uniform specimens was 7.5×105 cm2/V sec.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00549717
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical activity of iodine-diffused CdTe (1997)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 7 (1997), S. 1-8 
    Details
    ISSN: 1057-9257
    Keywords: CdTe ; iodine doping ; electrical activity ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The electrical activity of iodine in CdTe is discussed when iodine is introduced into the CdTe by diffusion from the vapour phase. It is compared both with the total concentration of iodine in the diffused CdTe slices and with the electrical activity in CdTe slices which have been annealed under Cd- and Te-saturated vapour pressures.Iodine-diffused slices of CdTe were profiled by secondary ion mass spectrometry (SIMS) to obtain the total iodine concentration and by capacitance-voltage (C-V) techniques to obtain the net concentration of electrically active iodine. After annealing with iodine in the form of Cdl2, the slices were p-type, similar to those obtained when CdTe was annealed in either excess Te or Cd vapour, and they showed no significant increase in electrical activity. If Cd was added to the Cdl2 diffusion source or the CdTe was given a subsequent anneal in cadmium vapour, the slices became n-type. The results indicated that in all cases a neutral layer composed of Cd nIm (m and n are integers) formed on the surface layers, whereas if Cd was involved in the diffusion, some of the iodine existed in an electrically active form deeper into the slice with a maximum concentration of active carriers given by ND - NA ≈ 1017 cm-3. © 1997 John Wiley & Sons Ltd.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
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