Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 3212-3214
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
In this letter, we describe the surface properties of GaN thin films grown on sapphire substrate by molecular beam epitaxy, as revealed by ultraviolet and x-ray photoelectron spectroscopic and Auger electron spectroscopic studies. The samples are seen to contain overlayer of native oxides, which are predominantly in the Ga2O3 form. Ammonia is shown to be a good etchant for these native oxides. Furthermore, we investigated the early stages of the reaction of monolayer Al with a GaN surface covered with native oxide. Aluminum reacts preferentially with the surface oxygen and leads to the formation of a mixture of oxides at the interface. © 1996 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.117964
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