ISSN:
0392-6737
Schlagwort(e):
III–V compounds and systems
;
III–V semiconductors
;
Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds)
;
Conference proceedings
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Physik
Notizen:
Summary We investigated the optical properties of excitons in quasi-onedimensional semiconductor quantum structures by photoluminescence and photoluminescence excitation. High-quality GaAs/Al x Ga1−x As heterostructures were grown using low-pressure organometallic chemical vapour deposition (OMCVD) on non-planar substrates. The experimentally observed subband separations are in good agreement with a theoretical calculation of the quantum-confined eigenstates, which includes the mapping of the crescent-shaped wire obtained on TEM micrographs. Additionally, a temperature dependence study of excitonic spectra reveals the dominant role of potential and size fluctuations in localizing the excitons.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF02457257
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