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  • 1
    Electronic Resource
    Electronic Resource
    Thermally stable ternary titanium-tantalum silicide formation on polycrystalline silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1456-1458 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A material for thermally stable self-aligned silicide technologies has been developed using sequentially deposited Ti/Ta on polycrystalline silicon. At lower annealing temperatures below 1000 °C two separate phases were found by cross-sectional transmission electron microscopy to exist in the form of bilayer TiSi2/TaSi2. The formation of a ternary phase (TiTa)Si2 has been observed at a higher temperature of 1000 °C. Consequently, the ternary (TiTa)Si2 layer could be kept extremely flat, with a sheet resistance of 5 Ω/(D'Alembertian), even after 1000 °C, 30 min annealing. Cross-sectional transmission electron micrographs of the structure clearly reveal that no agglomeration occurs during the heat treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354861
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of BF2+ implants on titanium silicide formation by rapid thermal annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 297-299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of titanium silicides on Si implanted with different BF2+ dosages has been studied by secondary ion mass spectrometry and transmission electron microscopy measurements. The thickness of the silicide layer formed in the temperature ranging from 600 to 800 °C has been investigated as a function of the implanted BF2+ dosage up to 1×1016 cm−2. Annealing at 700 °C results in conversion of the titanium film into predominantly C49 TiSi2, and most of it is transformed into the C54 phase at 800 °C or higher, resulting in a lower sheet resistance (16 μΩ cm). The titanium silicide thickness formed after the rapid thermal annealing (RTA) treatment depends on the implanted BF2+ dosage, caused by the native oxide enhanced by increased damage. Boron is redistributed into the silicide layer up to the solid solubility limit during annealing, leading to an accumulation at the silicide/silicon interface. The lowest contact resistance (with a size of 0.7 μm×0.7 μm) of 35 Ω is obtained at the annealing temperature of 700 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352136
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  • 3
    Electronic Resource
    Electronic Resource
    Enhancement of titanium nitride barrier metal properties by nitrogen radical assisted metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2580-2582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using metalorganic chemical vapor deposition assisted by a nitrogen radical irradiation generated by rf plasma, we have enhanced the quality and the step coverage of titanium nitride barrier metals for the contact holes with a high aspect ratio and a submicron radius. Electrical resistivity measurements show that the film resistivity improves by a factor of five as the proper nitrogen irradiation has been applied. The step coverage in a contact hole with 0.4 μm diam and 3:1 aspect ratio has been improved from 50% to 80% by applying nitrogen plasma, clearly demonstrating the effectiveness of this technique in the conformal deposition of barrier metals for the ultra-large scale integration. The incident nitrogen radical is believed to play several roles, such as the enhancement of surface migration rate of molecules and the reduction of the amount of hydrocarbon incorporating into the film during the deposition. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116190
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  • 4
    Electronic Resource
    Electronic Resource
    In-plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation-doped heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2345-2346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined the strain dependence of the in-plane hole effective mass in pseudomorphic Inx Ga1−x As/Al0.15 Ga0.85As modulation-doped heterostructures by low-temperature Shubnikov–de Haas measurements. An effective mass equal to 0.18m0 is measured for x=0.2. The measured values are in good agreement with theoretical calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101121
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  • 5
    Electronic Resource
    Electronic Resource
    Piezoreflectance characterization of double-barrier resonant tunneling structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 883-885 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The piezoreflectance technique has been used to optically characterize resonant tunneling structures that utilize isolated single quantum wells. The heavy- and light-hole transitions associated with the quantum wells were prominent in the spectra of samples with barrier widths ranging from 50 to 34 A(ring). Their spectral positions depended not only on quantum well and barrier thicknesses, but also significantly on the amount of carrier confinement produced by barrier height. Furthermore, variations in the magnitude of impurity transitions could be observed in the spectra of different samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100103
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  • 6
    Electronic Resource
    Electronic Resource
    Calculations of the electric field dependent far-infrared absorption spectra in InAs/AlGaSb quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 888-890 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitonic and band-to-band absorption spectra are calculated for vertical incident radiation for the InAs/AlGaSb multiple quantum well structures. Due to the special band lineup of this heterostructure, the absorption spectra can be tailored to respond in far infrared. The electric field dependence of the spectra shows blue shift and enhanced absorption in contrast to the situation in type I quantum wells. Applications to far infrared detectors are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101616
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  • 7
    Electronic Resource
    Electronic Resource
    A critical examination of the molecular-beam-epitaxial growth of InxGa1−xAs/GaAs strained quantum well structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1361-1363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the molecular-beam-epitaxial growth and optical properties of InxGa1−xAs/GaAs (0.07≤x≤0.20) single and multiple quantum well structures. Photoluminescence and absorption measurements were made to characterize the various structures. Low-temperature excitonic linewidths as small as 1.2–2.4 meV have been obtained in 80–120-A(ring) InxGa1−xAs/GaAs (0.07≤x≤0.20) single and multiple quantum wells up to total thicknesses of 2.0 μm. The Stokes shift in these samples is ∼1–2 meV. This result is independent of the absence or presence of an intermediate composition buffer layer and indicates that the latter does not influence the optical properties of strained multiquantum wells. The growth kinetics and growth modes are more important factors in this respect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343006
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  • 8
    Electronic Resource
    Electronic Resource
    The effect of molecular-beam-epitaxial growth conditions on the electrical characteristics of In0.52Al0.48As/In0.53Ga0.47As resonant tunneling diodes (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 842-845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the dependence of the performance characteristics of In0.52 Al0.48As/ In0.53 Ga0.47 As resonant tunneling diodes upon molecular-beam-epitaxial growth parameters. The roughness of the growth front, leading to intrawell-size fluctuations and the V/III flux ratio at a fixed growth temperature are found to be important parameters affecting the performance of these devices. By means of a simple model, we have semiquantitatively related the peak current to the interface roughness. Defects and traps in the In0.52 Al0.48 As barriers, on the other hand, produced partially by nonoptimal V/III flux ratios, may produce shunt paths for tunneling, again reducing the resonant tunneling current peak-to-valley ratio. Under optimum growth conditions we have measured current peak-to-valley ratios of 6.1 and 21.6 at 300 and 77 K, respectively. These are the best values reported so far for this heterostructure system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343075
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal and structural stability of cosputtered amorphous TaxCu1−x alloy thin films on GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4281-4286 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal and chemical stabilities of amorphous-metal diffusion barrier films are of importance in high-temperature semiconductor device applications. The reaction characteristics of the barrier constituents with the surrounding elements as well as the crystallization temperature determine the thermal stability of an amorphous-alloy diffusion barrier. We report that suitable thin films of Ta-Cu have been prepared over a wide range of compositions, by cosputter deposition onto GaAs and fused-quartz substrates. The amorphous nature and crystallization behavior of the films have been monitored by x-ray diffraction and van der Pauw resistivity measurements. Films were found to be amorphous over the range of 55–95 at. % Ta. In addition, Auger electron spectroscopy surveys and depth profiles were used to investigate the various interdiffusion reactions between the amorphous diffusion barrier, polycrystalline Au overlayers, and GaAs substrates. Barriers of Ta93Cu7 are remarkably effective in preventing Au in-diffusion, a 3000-A(ring) layer remaining unpenetrated after an annealing at 700 °C for 20 min. Diffusion of Ga and/or As into amorphous 93 at. % Ta is more rapid than that of Au. Interfacial reactions formed Ta3Au, CuAu, TaAs2, Ga3Cu7, Cu3As, and other unidentified compounds formed above 700 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337470
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  • 10
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy studies of titanium nitride/titanium/silicon structures after thermal annealing (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 579-581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen diffusion/incorporation behaviors of TiN/Ti/Si structures after thermal annealing in nitrogen ambients have been studied by x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy measurements. At the interface between Ti and TiN, titanium dioxides, thermodynamically most stable, are formed as a consequence of grain boundary diffusion, while inside TiN layer the contents of TiO and Ti2O3 compounds increases as the annealing temperature increases. At the interface between Ti and Si, titanium silicide formation is observed in the samples annealed above 450 °C consuming a part of pure Ti layer. One thing to note is that a severe blistering is observed in a sample annealed at 600 °C, probably caused by the difference of thermal expansion coefficients between TiSi2 and TiO2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108861
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