ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A passivation annealing in nitric oxide (NO) ambient significantly reduces the interfacialdefects of the SiO2/4H-SiC interface and improves the inversion MOS channel mobility. Effects ofthe nitridation in NO ambient become more pronounced at high temperatures in general. However,the maximum process temperature in a standard hot-wall oxidation furnace is restricted around1200oC due to the softening point of quartz. Meanwhile, by use of a cold-wall oxidation furnace, hightemperature and short time thermal processes become possible. In this study, we have developed anextremely high temperature (〉1400oC) rapid thermal processing for the gate oxidation in the 4H-SiCDIMOSFET fabrication process. The peak MOS channel mobility of lateral MOSFETs on theDIMOSFET chip shows as high as 19cm2/Vs. The specific on-resistance of the device was12.5m[removed info]cm2 and the blocking voltage was 950V with gate shorted to the source
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1309.pdf
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