Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Growth of native oxide on a silicon surface (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1272-1281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The control factors controlling the growth of native silicon oxide on silicon (Si) surfaces have been identified. The coexistence of oxygen and water or moisture is required for growth of native oxide both in air and in ultrapure water at room temperature. Layer-by-layer growth of native oxide films occurs on Si surfaces exposed to air. Growth of native oxides on n-Si in ultrapure water is described by a parabolic law, while the native oxide film thickness on n+-Si in ultrapure water saturates at 10 A(ring). The native oxide growth on n-Si in ultrapure water is continuously accompanied by a dissolution of Si into the water and degrades the atomic flatness at the oxide-Si interface, producing a rough oxide surface. A dissolution of Si into the water has not been observed for the Si wafer having surface covered by the native oxide grown in air. Native oxides grown in air and in ultrapure de-ionized water have been demonstrated experimentally to exhibit remarkable differences such as contact angles of ultrapure water drops and chemical binding energy. These chemical bond structures for native oxide films grown in air and in ultrapure water are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347181
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    New technique for the measurement of adsorbed moisture concentration on a solid surface (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2683-2686 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have established a new measurement method to evaluate the adsorbed moisture concentrations on solid surfaces exposed to the atmosphere having high moisture content ranging from 100 ppm to a few percent. The technique is based on the variation of the electric conductivity of anhydrous hydrogen fluoride. It has been found that the amount of adsorbed moisture on electropolished 316L stainless steel surface in an atmosphere with moisture concentration of 1% and 3% at 25 °C (relative humidity of 32% and 96% respectively) are 2.5× 1016 and 1.25×1017 molecules/cm2, respectively. This represents 25 and 125 molecule layers of water. The adsorbed moisture has been confirmed to reach an equilibrium level within an exposure time of 1 s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143856
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Influence of silicon wafer surface orientation on very thin oxide quality (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1159-1164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of silicon wafer surface orientation on very thin oxide quality were studied, testing Si(100) and (111) wafers. It has been found that the very thin oxide quality is determined by the silicon wafer surface orientation, and that when Si(111) is oxidized, SiO2/Si(111) interface microroughness increases as oxide becomes thicker than 10 nm, resulting in a degradation of oxide films quality on Si(111). When oxide thickness is decreased less than 10 nm, Si/SiO2 interface smoothness is maintained similar for Si(100) and (111) but SiO2/Si interface for Si(111) exhibits larger interface charges and larger threshold-voltage shift due to hot-electron injection than that for Si(100). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358980
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature silicon epitaxy by low-energy bias sputtering (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 364-366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bias sputtering at low energies, i.e., comparable to typical crystal interatomic binding energies, has been utilized to control the kinetics of thin-film growth. It was found that the crystallographic structures of sputter-deposited silicon films are drastically changed by the energy of ions incident at the substrate. As a result, formation of high quality epitaxial silicon films on (100) silicon substrates has been realized at such low temperatures as 320–350 °C. At the same time, low-temperature impurity doping of the epitaxial layer has been also demonstrated. Furthermore, the low-energy bias sputtering process has made it possible to perform very effective substrate surface cleaning at extremely low temperatures without introducing any damage to the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99914
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    High-rate growth at low temperatures by free-jet molecular flow: Surface-reaction film-formation technology (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1173-1175 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface-reaction film-formation technology of epitaxial Si and polcrystalline silicon using free-jet molecular flow is proposed. High-rate (∼0.5 μm/min or higher) growth of homoepitaxial Si films with high crystallographic perfection has been achieved at temperatures as low as 600 °C without the chemical by-product deposition on the inner surface of the reaction chamber. This result also implies that this system has the cleaning-free function. The film-formation mechanism appears to be dominated by the chemical reaction on the substrate surface without the vapor phase reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99196
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    In situ substrate-surface cleaning for very low temperature silicon epitaxy by low-kinetic-energy particle bombardment (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 45-47 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A very low temperature in situ substrate-surface cleaning process utilizing low-kinetic-energy particle bombardment has been developed. Dramatic improvements have been achieved in the crystallinity of epitaxial silicon films grown by the newly developed low-kinetic-energy particle process, in which argon ions having precisely controlled energies are continuously bombarding the film surface during the entire growth operation. With the optimized substrate-surface cleaning conditions, in which the contaminants on the surface of silicon substrates are removed without introducing any damages to the substrates, the epitaxial silicon layer with a perfect crystallinity has been obtained at such very low temperatures below 350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100121
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Room-temperature copper metallization for ultralarge-scale integrated circuits by a low kinetic-energy particle process (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2236-2238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Copper films were epitaxially grown on (100)Si substrates at room temperatures utilizing low kinetic-energy particle bombardment of growing copper film surfaces. The crystallographic structure of the film, such as (100) or (111) orientation, was selected by controlling the energy of incident particles. Low-temperature, damage-free substrate surface cleaning has also been realized by the low kinetic-energy particle process, which has made it possible to form ideal metal-semiconductor contacts without employing any alloying heat cycles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99542
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Control factor of native oxide growth on silicon in air or in ultrapure water (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 562-564 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Native silicon (Si) oxide growth on Si (100) wafers in air and in ultrapure water at room temperature requires coexistence of water and oxygen in the air and ultrapure water ambients. The growth rate data on n-, n+-, and p+-Si (100) in air indicate layer-by-layer growth of an oxide. The growth rate on n-Si (100) in ultrapure water may be governed by a parabolic law. For native oxide growth in ultrapure water, the number of Si atoms dissolved in ultrapure water is over one order of magnitude larger than the number of Si atoms contained in the grown native oxide film. The structural difference between the native oxide film in air and in ultrapure water is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102435
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Formation of low reverse current ion-implanted n+p junctions by low-temperature annealing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 966-968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By employing stress compensation technology in conjunction with an ultrahigh vacuum ion implanter, we have obtained two orders of magnitude smaller reverse-bias current levels in n+p junctions annealed at 550 °C as compared to the previous data. When samples are made with an optimum stress compensation condition, the magnitude of reverse-bias currents in n+p junctions as well as the carrier deactivation during post-implantation anneal becomes smallest. In order to further reduce the reverse-bias current level, it is shown that the elimination of contamination involvement during the implantation process is most essential.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101691
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 523-525 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of high quality epitaxial silicon films at 350 °C by a low kinetic energy particle process has been verified by a series of crystal structure analyses performed on these films. It was found that the crystallinity of a grown film is drastically changed by the energy of Ar ions concurrently bombarding the growing silicon film surface. The epitaxially grown film with an optimum ion bombardment energy is defect-free both at the interface and in the bulk of the film as revealed by high-resolution transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100919
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...