Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 1166-1168
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present the first internal photoemission response of a metal-Si-metal heterostructure. Using the Pt/Si/ErSi1.7 system, we show that the photoresponse of this new device can be strongly modified when a bias of a few hundred mV is applied between the two metallic electrodes: the cutoff wavelength is shifted from 1.4 μm to above 5 μm, and the quantum efficiency is increased up to 5% at 1.2 μm wavelength when a positive bias is applied to the front Pt electrode. These dramatic changes are attributed to a modulation of the effective potential barrier experienced by the photoexcited carriers when crossing the Si film.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107393
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