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Infrared response of Pt/Si/ErSi1.7 heterostructure: Tunable internal photoemission sensor (1992)

Pahun, L. ; Campidelli, Y. ; d'Avitaya, F. Arnaud ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 1166-1168

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We present the first internal photoemission response of a metal-Si-metal heterostructure. Using the Pt/Si/ErSi1.7 system, we show that the photoresponse of this new device can be strongly modified when a bias of a few hundred mV is applied between the two metallic electrodes: the cutoff wavelength is shifted from 1.4 μm to above 5 μm, and the quantum efficiency is increased up to 5% at 1.2 μm wavelength when a positive bias is applied to the front Pt electrode. These dramatic changes are attributed to a modulation of the effective potential barrier experienced by the photoexcited carriers when crossing the Si film.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.107393

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