Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 984-992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of GaAs and (Al,Ga)As doped with boron (from diborane) and silicon was investigated to examine the effect of boron on (DX) centers in silicon-doped material. The addition of diborane to the growth of GaAs and (Al,Ga)As results in the superlinear incorporation of boron into the solid with a concurrent reduction in the growth rate. Boron incorporation also decreases as the growth temperature is increased. Additionally, the AlAs mole fraction increases with increasing diborane during (Al,Ga)As growth. The DX center was not eliminated in (Al,Ga)As by the addition of boron. The thermal stability of these materials was also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351295
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Effect of structural parameters on transport characteristics of GaInAs/AlInAs two-dimensional electron gases grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1614-1616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of structural parameters on the transport characteristics from 15 to 300 K of molecular beam epitaxy grown GaInAs/AlInAs two-dimensional electron gas structures lattice matched to InP is determined. The AlInAs buffer layer thickness was varied from 1000 to 10 000 A(ring). One sample also incorporated a GaInAs/AlInAs superlattice. The AlInAs spacer layer was varied from 25 to 200 A(ring). The buffer layer thickness and structure has almost no effect on the mobility or sheet density. Increases in the AlInAs spacer thickness resulted in a monotonically decreasing sheet density and a peak in the mobility at 100 A(ring). The highest 77 K mobility was 66 700 cm2/V s with ND=1.20×1012 cm−2 in the structure with the 100 A(ring) spacer. The effect of illumination and temperature on the sheet concentration in these structures as well as on "bulk'' AlInAs:Si is much smaller than in AlGaAs/GaAs structures or "bulk'' AlGaAs, indicating that devices based on this material system will not be characterized by freeze-out and persistent photoconductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105142
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Properties of DX centers in AlxGa1−xAs co-doped with boron and silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2829-2831 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xAs co-doped with Si and B was investigated to determine the effect of B on the properties of DX centers. We found the deep level transient spectroscopy (DLTS) peak of the DX center to be unchanged and also observed large persistent photoconductivity (PPC), in samples containing boron in concentrations up to 6×1018 cm−3. Our finding that B has no significant effect on DX centers differs from an earlier report that the presence of low concentrations of B modified the DLTS spectrum of Si-doped GaAs under hydrostatic pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105873
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    DX centers in Sn-doped AlxGa1−xAs grown by metalorganic vapor phase epitaxy at T≥850 °C (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 374-376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It was recently inferred from low-temperature transport measurements that DX centers are not formed in Sn-doped AlGaAs grown by metalorganic vapor phase epitaxy at T≥850 °C. Deep level transient spectroscopy measurements reported here show that DX centers are present in this material. The high conductivity measured at low temperature comes from parallel conduction in the underlying GaAs due to Sn diffusion during growth at high temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106661
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...