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  • 1
    Electronic Resource
    Electronic Resource
    Filament-assisted diamond growth kinetics (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1385-1391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the growth rate of chemical vapor deposition diamond films under filament-assisted conditions using a microbalance. The pressure was varied from 20 to 200 Torr, and the ratio R of CH4 to H2 was varied from 0.2% to 1%. Raman spectra showed only diamond features for our films. We found that for R(approximately-greater-than)0.2%, where filament carburization was not an issue, the growth rate scaled as Rα, where α is an empirical constant that varies from about 1 at 20 Torr to about 0.5 at 200 Torr. A comparison of these results to predictions of our gas-phase/gas-surface model for diamond growth shows that the model accurately predicts both the value of α and how α varies with pressure. Reasons for the success of our very simple model are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349546
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    In situ characterization of diamond nucleation and growth (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 416-417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Filament-assisted chemical vapor deposition (CVD) diamond film growth on Si(100) was studied using x-ray photoelectron spectroscopy (XPS) to examine the sample at selected intervals during the nucleation and growth processes. The sample was transferred under vacuum from the growth chamber to the attached XPS analysis chamber without exposure to air. Before growth XPS showed that the Si sample is covered by a layer of SiO2 and carbonaceous residue; however, after 15 min of growth both of these substances are removed and replaced by a distinct SiC layer [Si(2p)=100.3 eV and C(1s)=282.7 eV].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100938
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Measurement of stable species present during filament-assisted diamond growth (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1605-1607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured mole fractions of two of the major stable species at the surface of a silicon substrate during filament-assisted diamond growth as a function of the filament-to-substrate distance. Input gases were methane and hydrogen. A quartz probe withdrew gases at the growing surface, and the gases were sampled with an on-line mass spectrometer. Close to the filament the methane is largely consumed, with most of the remaining gas phase carbon in the form of acetylene. Mass spectral results are compared to compositions calculated with a detailed chemical kinetics model. Our initial analysis suggests that diamond growth comes mainly from reaction of acetylene, ethylene, methane, or methyl radical.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99925
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    Paper (German National Licenses)
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