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  • 1
    Electronic Resource
    Electronic Resource
    Structural and electrical characterization of epitaxial, large area ferroelectric films of Ba2Bi4Ti5O18 grown by pulsed excimer laser ablation (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2825-2829 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excimer laser ablation was used to deposit epitaxial thin films of Ba2Bi4Ti5O18 having mostly c-axis oriented grains. The ferroelectric layer was deposited on an epitaxial conducting oxide electrode layer of LaNiO3, the electrode layer in turn being grown on an epitaxial buffer layer stack on single crystalline (100)-oriented silicon wafers of 3 in. diameter. X-ray diffraction measurements indicate a strong c-axis orientation of the ferroelectric layer. Scanning electron microscopy and atomic force microscopy were used to observe the microstructure of the films and these revealed the homogenous quality of the film with good uniformity over the wafers. Well-defined, saturated ferroelectric hysteresis loops were observed in the compound with values of 1.3 and 0.6 μC/cm2 as saturation and remnant polarization values, respectively, and a coercive field of 47 kV/cm. The results of I–V measurements and complex impedance spectroscopy measurements are presented and a defect formula is proposed for the compound. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372263
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  • 2
    Electronic Resource
    Electronic Resource
    Raman scattering from PbTiO3 thin films prepared on silicon substrates by radio frequency sputtering and thermal treatment (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 394-399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been carried out on PbTiO3 thin films prepared on platinum-coated (100) silicon by radio-frequency (rf)-magnetron sputtering without substrate heating and a post-deposition thermal treatment. The Raman spectra obtained from the thin film are characteristic of powder Raman spectra: In comparison with the single crystal spectra, the intensity of the background is relatively high at low frequencies and the Raman lines are broad. The lattice phonon modes corresponding to the observed lines are identified by comparison with the data on single crystals and powder. The Raman frequencies for the thin film remarkably shift to low frequencies compared with single-crystal data. It is shown that the phenomenon of the frequency shifts is similar with the hydrostatic pressure effect on single crystals of PbTiO3. The result indicates that the thin films are composed of grains that are stressed depending on the grain size by neighboring grains of different orientations when they are split up into ferroelectric domains at the paraelectric-to-ferroelectric transition. This stress effect is significant even for a grain size of ∼0.5 μm. It is found that the lowest frequency E transverse optical (TO) mode in the thin film shows softening with increasing temperature as was reported in previous studies on single crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353862
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  • 3
    Electronic Resource
    Electronic Resource
    Raman scattering study of lead zirconate titanate thin films prepared on silicon substrates by radio frequency magnetron sputtering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6625-6631 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering is used to characterize thin films of PbTi1−xZrxO3. The films have been prepared on platinum-coated (100) silicon by radio-frequency (rf)-magnetron sputtering without substrate heating followed by a post-deposition annealing at 600–650 °C. As the concentration of Zr is increased, the Raman peaks broaden and their intensities decrease more rapidly compared with bulk ceramic or powder samples, while the background intensity increases. The observations show that the crystal structure of the films is locally deformed and significantly disordered. With increasing x, the soft E(TO) mode shifts to lower frequencies. An additional Raman peak appears besides the phonon peaks expected in a perfect crystal. The soft mode strongly couples with the extra mode, similarly with the case of ceramic samples. The results are related to features of the thin films such as a frustrated phase transition, i.e., smaller differences between the lattice parameters a and c in comparison with powder data, and an electrical behavior showing a diffuse ferroelectric-to-paraelectric transition with a broad peak.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355103
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  • 4
    Electronic Resource
    Electronic Resource
    Bi4Ti3O12 ferroelectric thin film ultraviolet detectors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 342-344 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi4Ti3O12 (BiT) ferroelectric thin films were used as photoconductive or photovoltaic ultraviolet detectors. The maximum of the spectral distribution lies around 370 or 390 nm, depending on whether the incident light is continuous or modulated. The maximum current responsivity obtained for the films annealed at 700 °C is about 0.01 A/W. The specific detectivity is 5.5×108 cm W−1 Hz1/2 at a modulation frequency of 20 Hz. The frequency characteristics of the photovoltaic signal measured in modulated light suggests a 1/f frequency dependence of this signal. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121828
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  • 5
    Electronic Resource
    Electronic Resource
    BaBi4Ti4O15 ferroelectric thin films grown by pulsed laser deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 603-605 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: BaBi4Ti4O15 (BBiT) is an n=4 member of the Bi-layer-structured ferroelectric oxide family (Aurivillius phases). BBiT thin films with preferred orientations have been grown on epitaxial conducting LaNiO3 electrodes on (001) SrTiO3 by pulsed laser deposition. Cross-section electron microscopy analysis reveals that the films consist of ct-axis oriented regions and mixed at- and ct-axis oriented regions. The mixed at- and ct-axis oriented regions show high surface roughness due to the rectangular crystallites protruding out of the surface, whereas the ct-axis oriented regions show a smooth surface morphology. In the mixed at- and ct-axis oriented regions, the BBiT films exhibit saturated ferroelectric hysteresis loops with remnant polarization Pr of 2 μC/cm2 and coercive field Ec of 60 kV/cm and no polarization fatigue up to 108 cycles. The regions having ct-axis orientation with a smooth surface morphology exhibit a linear P–E curve. The results show that the ferroelectric properties of a planar capacitor consisting of BBiT depend on the crystalline orientation of the film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123159
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  • 6
    Electronic Resource
    Electronic Resource
    Self-patterning nano-electrodes on ferroelectric thin films for gigabit memory applications (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1592-1594 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present work, we report self-assembling bismuth-containing nano-electroded cells of layered perovskite ferroelectric thin films that are about 200 nm in size, that is 50 times smaller than the smallest cell reported to date. Heteroepitaxial Bi-rich Bi4Ti3O12 films were grown by pulsed laser deposition (PLD) on top of epitaxial conductive La0.5Sr0.5CoO3 (LSCO) layers equally deposited by PLD. The epitaxial LSCO has been grown on top of an epitaxial CeO2 yttrium-stabilized zirconia (YSZ) stack, itself deposited by PLD on Si(100) substrates. As a consequence of the high substrate temperature during the epitaxial deposition of the Bi4Ti3O12 layer, the excess Bi segregates, migrates to the surface where it forms a self-organized array of epitaxial mesas which possess metallic-like electrical characteristics. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122214
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  • 7
    Electronic Resource
    Electronic Resource
    Optical properties of PZT and PMZT sputtered thin films
    Amsterdam : Elsevier
    Solid State Communications 78 (1991), S. 1039-1043 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(91)90125-F
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  • 8
    Electronic Resource
    Electronic Resource
    Orientation dependence of ferroelectricity in pulsed-laser-deposited epitaxial bismuth-layered perovskite thin films (2000)
    Springer
    Applied physics 70 (2000), S. 283-291 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55-a; 77.80-e; 81.15.Fg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Thin films of bismuth-layered perovskites such as SrBi2Ta2O9, Bi4Ti3O12, and BaBi4Ti4O15 with preferred orientations were grown by pulsed laser deposition on epitaxial conducting LaNiO3 electrodes on single-crystalline (100) SrTiO3 or on top of epitaxial buffer layers on (100) silicon. A morphology and structure investigation by X-ray diffraction analysis, scanning probe microscopy, and scanning and transmission electron microscopy showed that the films consisted of both c-axis-oriented regions and mixed (110)-, (100)-, and (001)-oriented regions. The regions with mixed orientation featured rectangular as well as equiaxed crystalline grains protruding out of a smooth c-oriented background. A closer examination revealed that the regions with mixed orientation actually consisted of a c-axis-oriented sublayer growing directly on the epitaxial LaNiO3 electrode, on top of which the growth of either (110)-, (100)-, or (001)-oriented grains took place. Macroscopic as well as microscopic measurements of the ferroelectric properties of regions with pure c-orientation and of regions with mixed orientations showed a clear relationship between their ferroelectric properties and their morphology and crystallographic orientation. In the regions with mixed orientation, the films exhibited saturated ferroelectric hysteresis loops with well-defined remnant polarisation Pr and coercive field Ec. The regions having c-axis orientation with a smooth surface morphology in contrast exhibited a linear P-E curve with no hysteretic behaviour for SrBi2Ta2O9 and BaBi4Ti4O15 and a weak ferroelectric behaviour for Bi4Ti3O12. This clearly showed that the ferroelectric properties of bismuth-layered ferroelectric oxides depended on the crystalline orientation of the film and that the observed ferroelectric hysteresis loops in SrBi2Ta2O9 and BaBi4Ti4O15 films were solely due to the (100)- and (110)-oriented grains. The size of the (110)- and (100)-oriented grains being of the order of 100 nm and spontaneous polarisation having been observed and switched in a controlled manner is a demonstration that ferroelectricity can exist in structures of submicrometer size. These results might have a technological impact due to the relevance of bismuth-layered ferroelectric oxides for the fabrication of non-volatile FeRAM memories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050048
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  • 9
    Electronic Resource
    Electronic Resource
    Quantitative ferroelectric characterization of single submicron grains in Bi-layered perovskite thin films (2000)
    Springer
    Applied physics 70 (2000), S. 261-267 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 07.79.-v; 77.80.Dj; 77.65.Bn
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The local polarization state and the electromechanical properties of ferroelectric thin films can be probed via the converse piezoelectric effect using scanning force microscopy (SFM) combined with a lock-in technique. This method, denominated as piezoresponse SFM, was used to characterize at the nanoscale level ferroelectric SrBi2Ta2O9 and Bi4Ti3O12 thin films, grown by pulsed laser deposition. Two types of samples were studied: polycrystalline films, with grains having random orientations, and epitaxial films, consisting of (100)orth- or (110)orth-oriented crystallites, 100 nm to 2 μm in lateral size, which are embedded into a (001)-oriented matrix. The ferroelectric domain structure was imaged and the piezoelectric response under different external conditions was locally measured for each type of sample. Different investigation procedures are described in order to study the ferroelectric properties via the electromechanical response. A distinct ferroelectric behavior was found for single grains of SrBi2Ta2O9 as small as 200 nm in lateral size, as well as for 1.2 μm×175 nm crystallites of Bi4Ti3O12. By probing separately the crystallites and the matrix the investigations have demonstrated at the nanoscale level that SrBi2Ta2O9 has no spontaneous polarization along its crystallographic c-axis, whereas Bi4Ti3O12 exhibits a piezoelectric behavior along both the a- and c-directions. The electrostriction coefficients were estimated to be 3×10-2 m4/C2 for polycrystalline SrBi2Ta2O9 and 7.7×10-3 m4/C2 for c-orientedBi4Ti3O12. Quantitative measurements at the nanoscale level, within the experimental errors give the same values for remanent polarization and coercive field as macroscopic ferroelectric measurements performed on the same samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050045
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates (2000)
    Springer
    Applied physics 71 (2000), S. 101-104 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 77.84.-s; 68.55.-a; 81.15.Fg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO2 (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO3. Studies on the in-plane crystallographic relations between SrRuO3 and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well-defined orientation relations, viz. SBT(116)∥SrRuO3(110)∥YSZ(100)∥Si(100), SBT[110]∥SrRuO3[001], and SrRuO3[111]∥YSZ[110]∥Si[110].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050034
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