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Combined interface plasmon polariton and x-ray reflectivity determination of the dielectric tensor in ultrathin liquid crystal films (1995)

Pogreb, R. ; Cohen, G. ; Tarabia, M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 3323-3329

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have carried out interface plasmon polariton (IPP) and specular x-ray reflectivity studies of the same multilayer structure containing a thin metallic silver film and a thin (100–600 A(ring)) smectic C* ferroelectric liquid crystal (FLC) film on a glass substrate. An additional thin nylon layer sandwiched between these two films is essential to improve the smectic FLC alignment and its stability. The specular x-ray reflectivity after each stage of layer deposition provides information on the thickness and the electron density of the individual layer. Particularly, this technique allows for the determination of the amplitude and the phase of the electronic density modulation (i.e., the smectic order parameter) of the FLC film. We demonstrate that the x-ray results are essential for the determination of the complex dielectric functions of the FLC film from the shape and the angular position of the IPP resonance. Generally, we have found that for samples with a relatively large smectic order parameter the IPP resonance can be best fitted assuming an anisotropic dielectric tensor and the presence of domains in the FLC film. For well ordered smectic C* films at room temperature, the anisotropy of the dielectric tensor is slightly higher compared to the bulk value and shows a tendency to increase with the decrease of the film thickness in ultrathin films. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360025

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Frequency dispersion of HTSC-film impedance in the MHz range (1994)

Feldberg, S. ; Voronel, A. ; Gore, V. ; [et al.]

Springer

Journal of superconductivity 7 (1994), S. 471-473

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ISSN: 1572-9605

Keywords: HTSC film ; low frequency ; impedance dispersion ; equivalent scheme

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: Abstract The impedance of a circuit including an HTSC film as a function of temperature and frequency has been measured, and the presence of an intrinsic reactance in the HTSC films has been shown. The equivalent scheme of the measuring circuit has been synthesized, and the temperature dependence, type, and value of the HTSC-film reactance has been determined in the transition region nearT c . It is shown that the change of reactance sign with temperature observed earlier by a number of researchers and attributed to the intrinsic property of HTSC-film reactance was rather the result of the T-independent parasite reactive elements while the film impedance was becoming small.