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  • 1
    Electronic Resource
    Electronic Resource
    Physical Principles of New Devices Related to Giant Electric Field Effect in MDS Structure (1997)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 55 (Aug. 1997), p. 29-31 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.55.29.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Electric-field-effect thermoelectrics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2370-2379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A significantly large thermoelectric "figure of merit" in a bipolar semiconductor is achieved by converting it, by doping, into an essentially monopolar semiconductor. We show here, that for a bipolar semiconductor film, having a thickness smaller than the screening length, there is an alternative to doping to obtain a practically monopolar semiconductor. The electric-field effect (EFE) or the ferroelectric-field effect can be used to quench the concentration of one type of charge carriers. We show that this method is particularly suited for narrow-gap semiconductors and for semimetals, having sufficiently high dielectric permittivity. We also show that this "EFE doping" is free from the drawbacks of conventional doping. Our analysis demonstrates that increased values of the figure of merit are feasible. We present here the theory and the figure-of-merit calculation for typical cases of the bipolar semiconductor thermoelectric film under EFE doping. Numerical results for a film of the PbTe type are presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389074
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  • 3
    Electronic Resource
    Electronic Resource
    Combined interface plasmon polariton and x-ray reflectivity determination of the dielectric tensor in ultrathin liquid crystal films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3323-3329 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out interface plasmon polariton (IPP) and specular x-ray reflectivity studies of the same multilayer structure containing a thin metallic silver film and a thin (100–600 A(ring)) smectic C* ferroelectric liquid crystal (FLC) film on a glass substrate. An additional thin nylon layer sandwiched between these two films is essential to improve the smectic FLC alignment and its stability. The specular x-ray reflectivity after each stage of layer deposition provides information on the thickness and the electron density of the individual layer. Particularly, this technique allows for the determination of the amplitude and the phase of the electronic density modulation (i.e., the smectic order parameter) of the FLC film. We demonstrate that the x-ray results are essential for the determination of the complex dielectric functions of the FLC film from the shape and the angular position of the IPP resonance. Generally, we have found that for samples with a relatively large smectic order parameter the IPP resonance can be best fitted assuming an anisotropic dielectric tensor and the presence of domains in the FLC film. For well ordered smectic C* films at room temperature, the anisotropy of the dielectric tensor is slightly higher compared to the bulk value and shows a tendency to increase with the decrease of the film thickness in ultrathin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360025
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  • 4
    Electronic Resource
    Electronic Resource
    Hall constant in quantum-sized semimetal Bi films: Electric field effect influence (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2634-2640 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the influence of a gate voltage on the Hall constant [electric field effect Hall constant (EFE–HC)] in a quantum-sized Bi film. The dependence of EFE–HC on the applied electric field, film thickness, and temperature was measured. The electric field effect induces a change of several tens of percent in the Hall constant under an applied electric field of 108 V/m. The effect depends on the film thickness in an oscillatory manner similar to that observed in other quantum-size characteristics. We present an interpretation of the known temperature maximum of HC in quantum size Bi films in absence of EFE, by considering the temperature dependence of the electron and hole mobilities. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288166
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  • 5
    Electronic Resource
    Electronic Resource
    The cause of the anomalously small electric field effect in thin films of Bi (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1628-1630 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the electric field effect (EFE) in thin films of Bi exhibit an unexpectedly small effect. Even though the additional charge density is comparable with the intrinsic carrier concentration, the measured EFE is minute. We show that this can be attributed to the following facts: (1) The additional charge due to EFE is divided between the electron and hole bands correspondingly to the density-of-states (DOS). The Bi film is in the quantum-size regime, thus the carriers DOS depend linearly on the corresponding effective masses of DOS. (2) The nature of the scattering mechanism is such that the ratio of the carrier mobilities is almost equal to the inverse ratio of the corresponding effective masses. This near equality is the cause of the anomalous EFE in Bi films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124776
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  • 6
    Electronic Resource
    Electronic Resource
    Electro-optical structure with high speed and high reflectivity modulation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 882-884 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A voltage controlled, multilayer electro-optic structure is proposed. It is constructed from repeated Schottky-like modules, which consist of layers of semiconductor-dielectric-semiconductor. The device reflectivity, in the range of incidence angles corresponding to surface plasmon excitation, is determined by the combined thickness and permittivity of the semiconductor space charge regions of all modules. A structure consisting of many modules allows for a large effective thickness of the voltage controlled space charge region which yields a high reflectivity modulation. Calculations show that fast (response time ∼ 10−10 s) and low-voltage structures with reflectivity modulation depth of more than 80% can be constructed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116218
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of the electrical properties of semimetallic Bi films by electrical field effect (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1266-1273 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical field effect (EFE) was used to investigate and to characterize the electrical properties of Bi films. The samples were prepared in a capacitor configuration with Al as the gate electrode, Al2O3 as the dielectric and the thin (∼1300 Å) thermal-evaporation deposited Bi film sample serving as the other electrode. The dependence of EFE on the electrical field (up to electrical displacements ∼107 V/cm or (approximate)1013[e]/cm2 "surface" charge) and on temperature (15–300 K), and also the temperature dependence of Hall constant, were determined. The experimental results are shown to be consistent with the EFE theory of a semimetal film, assuming that: (1) the film has an interface "dead layer" (∼600 Å) that does not contribute markedly to EFE due to its extremely low carrier mobilities. Only in the rest, "good" part of the film, the electroconductivity is modulated and leads to a measurable EFE; (2) the temperature behavior of EFE follows the temperature dependence of the electron and hole mobilities and its sign is determined by their relative magnitudes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365897
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  • 8
    Electronic Resource
    Electronic Resource
    Frequency dispersion of HTSC-film impedance in the MHz range (1994)
    Springer
    Journal of superconductivity 7 (1994), S. 471-473 
    Details
    ISSN: 1572-9605
    Keywords: HTSC film ; low frequency ; impedance dispersion ; equivalent scheme
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The impedance of a circuit including an HTSC film as a function of temperature and frequency has been measured, and the presence of an intrinsic reactance in the HTSC films has been shown. The equivalent scheme of the measuring circuit has been synthesized, and the temperature dependence, type, and value of the HTSC-film reactance has been determined in the transition region nearT c . It is shown that the change of reactance sign with temperature observed earlier by a number of researchers and attributed to the intrinsic property of HTSC-film reactance was rather the result of the T-independent parasite reactive elements while the film impedance was becoming small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00724591
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