ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Thermally stimulated current spectroscopy (TSC) has been applied to characterize deeptraps in high-purity semi-insulating 6H-SiC substrates. By using above bandgap to sub-bandgaplight for illumination at 83 K and different applied biases, at least nine TSC traps in the temperaturerange of 80 to 400 K can be consistently observed. It is found that TSC peaks for T 〈 130 K aresignificantly affected by light and some peaks are strongly enhanced by the applied bias. Measuredtrap activation energies range from 0.15 eV to 0.76 eV. Theoretical fittings of selected traps givemore accurate trap parameters. Based on literature results connected with deep traps in conductive6H-SiC, the origin of these TSC traps is discussed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.509.pdf
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