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  • 1
    Electronic Resource
    Electronic Resource
    Evidence of an off-center position of thulium in GaAs and excitonic excitation of the Tm3+ emission (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6457-6459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By photoluminescence and by Zeeman spectroscopy we study the characteristic 4f luminescence transition 3H5 → 3H6 at 1.0 eV of thulium in gallium arsenide which has been reported recently. It turns out that optically active Tm3+, which is present in mainly one specific type of center, does not occupy a simple substitutional lattice site. The results show a considerable tetragonal crystal field. The excitation mechanism of the 1.0-eV luminescence is investigated by photoluminescence excitation. The 3H5 → 3H6 is pumped most efficiently by trapping of free excitons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355133
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  • 2
    Electronic Resource
    Electronic Resource
    A model for the Fe-related emission at 3057 cm−1 in GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5703-5705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present Fourier transform infrared photoluminescence (PL) and absorption studies on GaAs:Fe to analyze the origin of the Fe-related emission at 3057 cm−1. Temperature-dependent PL spectra show additional hot lines and a characteristic phonon sideband linked to this Fe-related peak. Time-resolved studies, using the 1.06 μm line of a Nd:YAG laser for excitation, reveal a decay time of 1.9±0.3 ms. The long lifetime and the fine-structure splitting fit a model where the transitions take place between the 4T1 excited state and the 6A1 ground state of Fe3+ (3d5) in tetrahedral environment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350504
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence study of the 1.047 eV emission in GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3214-3218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use photoluminescence to study residual transition metal contaminants in GaN layers, which are grown by the sandwich technique either on 6H-SiC substrate or on sapphire substrate. We observe three no-phonon lines in the near infrared optical region at 1.3 eV, 1.19 eV, and 1.047 eV caused by 3d transition metals. The appearance of GaN related host modes in the phonon sideband of these emissions proves that the luminescence centers are incorporated in the hexagonal GaN layers. In this paper we especially focus on the luminescence band with the no-phonon line at 1.047 eV. Temperature dependent photoluminescence measurements reveal an excited state splitting of 8 meV. In photoluminescence excitation spectroscopy we observe a further excited state at 1.6 eV with a fine structure splitting. The appearance of this excited state in the n-type samples gives evidence that the defect must already exist in its luminescent charge state without illumination. The experimental results on the 1.047 eV emission fit to a 4T2(F)→4A2(F) internal electronic transition of a transition metal with a 3d7 electronic configuration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361266
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  • 4
    Electronic Resource
    Electronic Resource
    Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCy on Si(001) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6711-6715 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxial growth of Si1−yCy alloys pseudomorphically strained on the (2×1) reconstructed Si(001) has been investigated as a function of growth conditions. An important question concerns the relation between substitutional and interstitial carbon incorporation, which has a large impact on electrical and optical properties of these layers. We show that the interstitial-to-substitutional carbon ratio is strongly influenced by the growth conditions, such as growth temperature and Si growth rate. Both reduction in growth temperature and increase of the overall growth rate lead to an increase in the substitutional-to-interstitial carbon ratio. However, these changes in growth conditions can also cause some deterioration in crystal quality. The carbon incorporation behavior is well described by first order kinetics. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363797
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  • 5
    Electronic Resource
    Electronic Resource
    Shallow donors in Ge-rich GeSi bulk crystals (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2708-2710 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the change of shallow donor energy levels with alloy composition in Ge-rich Ge1−xSix bulk crystals. For phosphorus, we find a strong, linear increase of the ionization energy with increasing Si content for 0〈x〈0.1, whereas, for antimony the ionization energy shifts only slightly to higher energies with increasing Si content up to x=0.11. We observe a rapid increase of the antimony ionization energy in the composition range 0.11〈x〈0.16, where the change in the conduction band minimum from Ge- to Si-like occurs. The different behavior of phosphorus and antimony in Ge-rich GeSi reflects the different short range impurity potentials of these donors and, thus, different mixing of bands. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123944
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetotransport in narrow In0.53Ga0.47As/InP wires (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1757-1759 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated dry etched In0.53Ga0.47As quantum wires with geometrical widths varying from 80 nm to 50 μm from modulation-doped heterostructures. All wires show finite resistances even at 40 mK without illumination. The magnetotransport measurements show clearly the depopulation of one-dimensional subbands, universal conductance fluctuations, and an anomalous magnetoresistance peak.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104058
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  • 7
    Electronic Resource
    Electronic Resource
    Alloy effects in boron doped Si-rich SiGe bulk crystals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 709-712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated boron doped Si1−xGex bulk crystals over the composition range 0≤x≤0.13 by photoconductivity, photoluminescence, and temperature-dependent Hall effect measurements. Hall effect measurements yield the relation EI=(44.4–108x) meV for the change of the boron ionization energy EI with alloy composition. The far-infrared photoconductivity onset caused by the shallow acceptor boron does not shift as much to lower energies with increasing Ge content as previously reported. Transitions that involve excited levels of the shallow acceptor boron are recognizable as a redshift of the photoconductivity onset with increasing temperature. Comparison of the Hall effect data with the shift of the photoconductivity spectra and the evaluation of photoluminescence linewidths give experimental evidence for an inhomogeneous distribution of Ge atoms in the alloy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368126
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  • 8
    Electronic Resource
    Electronic Resource
    GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1033-1035 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the structural and optical properties of GaN epitaxial layers grown on 6H-SiC. We employed the sublimation sandwich method to grow single crystal layers at high growth rates with free carrier concentrations of 2×1017 cm−3. Very narrow x-ray diffraction peaks of the GaN (0002) plane are obtained indicating the high quality of this system. These findings are directly reflected in the optical properties. The photoluminescence shows a single sharp exciton line with a half width of 4 meV. Impurity related donor acceptor transitions are seen with very weak intensities. However, at lower energies the internal luminescence transitions of the 3d transition metal ions Fe and V are observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112143
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  • 9
    Electronic Resource
    Electronic Resource
    Investigations on InP:Ti grown by metalorganic vapor phase epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1259-1261 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ti doped InP layers were grown by atmospheric pressure metalorganic vapor phase epitaxy. Using the commercially available tetrakis(diethylamino)-titanium, we obtained total Ti doping levels up to 1020 cm−3. Photocurrent measurements and deep level transient spectroscopy enabled us to investigate the internal 3d-transitions of Ti3+ (2E→2T2: 546.5 and 550 meV) and the Ti3+/Ti4+ transition (0.62 eV) confirming substitutional incorporation of Ti in InP. The concentration of electrically active Ti is limited to a value of 2.5×1017 cm−3, as determined by InP:Ti:Zn co-doping experiments. Secondary ion mass spectroscopy demonstrated, that oxygen incorporation is one reason for incomplete electrical activity, especially in the lower Ti doping region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107423
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  • 10
    Electronic Resource
    Electronic Resource
    Zeeman spectroscopy of the Fe3+ center in GaN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2822-2824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an optical investigation of the Zeeman behavior of the deep iron acceptor in GaN grown on 6H–SiC. The characteristic ground state splitting of the near-infrared luminescence transition at 1.2988 eV allows for an unambiguous assignment to Fe3+previously proposed on the basis of ODMR results. The observed luminescence lifetime of 8 ms as well as the fine structure of the excited state are consistent with a 4T1(G)–6A1(S) transition. The 4T1(G) state is found to couple only weakly to ε-type phonon modes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114796
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